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US 2012/0223308 A1Published application
Thin-film transistor, process for production of same, and display device equipped with same
AssigneeSharp Kabushiki Kaisha
InventorsTohru Okabe, Yoshimasa Chikama
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Abstract
The present invention provides a thin-film transistor capable of high-speed operation, a process for producing the same, and a display device including the same. The thin-film transistor of the present invention includes, on a substrate, in the order of: a gate electrode; a gate insulating film; an oxide semiconductor film; and a protective insulating film, the protective insulating film having a planar shape that is completely or substantially the same as the planar shape of the gate electrode.
Claims9
A bottom-gate thin-film transistor, comprising, on a substrate, in the order of:
- a gate electrode;
- a gate insulating film;
- an oxide semiconductor film;
- and
- a protective insulating film,
- the protective insulating film having a planar shape that is completely or substantially the same as the planar shape of the gate electrode.
3 more elements
Dependencies are inferred from the claim text.