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US 2012/0223307 A1Published application
Method for manufacturing transistor
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorJunichiro SAKATA
Life of this patent
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Abstract
A hydrogen barrier layer is selectively provided over an oxide semiconductor layer including hydrogen and hydrogen is selectively desorbed from a given region in the oxide semiconductor layer by conducting oxidation treatment, so that regions with different conductivities are formed in the oxide semiconductor layer. After that, a channel formation region, a source region, and a drain region can be formed with the use of the regions with different conductivities formed in the oxide semiconductor layer.
Claims16
A semiconductor device comprising:
- an oxide semiconductor layer including a first region and a second region, the first region including a channel region;
- a gate insulating layer adjacent to the oxide semiconductor layer;
- a gate electrode adjacent to the oxide semiconductor layer with the gate insulating layer interposed therebetween;
- and
- a conductive layer in contact with the second region of the oxide semiconductor layer,
- wherein the first region includes hydrogen at a lower concentration than the second region, and
- wherein the first region includes oxygen at a higher concentration than the second region.
4 more elements
A semiconductor device comprising:
- an oxide semiconductor layer including a first region and a second region, the first region including a channel region;
- a gate insulating layer adjacent to the oxide semiconductor layer;
- a gate electrode adjacent to the oxide semiconductor layer with the gate insulating layer interposed therebetween;
- a conductive layer in contact with the second region of the oxide semiconductor layer;
- and
- a pixel electrode in electrical contact with the conductive layer,
- wherein the first region includes hydrogen at a lower concentration than the second region, and
- wherein the first region includes oxygen at a higher concentration than the second region.
5 more elements
Dependencies are inferred from the claim text.