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US 2012/0223288 A1Published application
Semiconductor device, method of manufacturing the same, and electronic device including the semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsSun-kook Kim, Woong Choi, Sang-yoon Lee
Life of this patent
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Abstract
An example embodiment relates to a transistor including a channel layer. A channel layer of the transistor may include a plurality of unit layers spaced apart from each other in a vertical direction. Each of the unit layers may include a plurality of unit channels spaced apart from each other in a horizontal direction. The unit channels in each unit layer may form a stripe pattern. Each of the unit channels may include a plurality of nanostructures. Each nanostructure may have a nanotube or nanowire structure, for example a carbon nanotube (CNT).
Claims22
A transistor comprising:
- a channel layer,
- the channel layer including a plurality of unit layers spaced apart from each other in a vertical direction, and
- each of the plurality of unit layers including a plurality of unit channels spaced apart from each other in a horizontal direction;
- a source arranged laterally on one side of the channel layer;
- a drain arranged laterally on an other side of the channel layer;
- and
- a gate corresponding to the channel layer.
4 more elements
A diode comprising:
- a first layer connected to a second layer,
- the first layer including a plurality of unit layers spaced apart from each other in a vertical direction, and
- each of the plurality of unit layers including a plurality of semiconductor elements spaced apart from each other in a horizontal direction.
Dependencies are inferred from the claim text.