Resistive memory cell fabrication methods and devices

A variable resistance memory cell, comprising:

• a variable resistance material with a first side at a first plane and a second side opposing said first side;
• a first electrode abutting said first side of the variable resistance material;
• and
• a second electrode abutting said second side of the variable resistance material and including projections that extend towards the first plane.

A phase change memory array, comprising:

• a plurality of word lines;
• a plurality of cell select lines;
• a plurality of bit lines;
• and
• a plurality of phase change memory bit structures, each structure including an access device and a phase change memory cell, the memory cell being connected with one of the plurality of cell select lines and coupled with one of the plurality of bit lines through the access device gated by one of the plurality of word lines, the memory cell comprising:
• a phase change material with a first side at a first plane and a second side opposing said first side;
• a first electrode abutting said first side of the phase change material;
• and
• a second electrode abutting said second side of the phase change material and including projections that extend towards the first plane.

A method of fabricating a variable resistance memory cell, comprising:

• forming a first electrode;
• forming a variable resistance region from variable resistance material deposited over a top surface of the first electrode such that a first side of the variable resistance region abuts the first electrode at a first plane and such that a second side of the variable resistance region opposes the first side;
• and
• forming a second electrode over the second side of the variable resistance region, the second electrode including projections that extend towards the first plane.