Thermal Anneal of Block Copolymer Films with Top Interface Constrained to Wet Both Blocks with Equal Preference
AssigneeMicron Technology, Inc.
InventorsDan B. Millward, Timothy Quick
Life of this patent
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Abstract
Methods for fabricating sublithographic, nanoscale microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.
Claims19
A method of forming a nanostructured polymer material, comprising thermally annealing a block copolymer material in a vapor of an organic solvent to cause the polymer blocks to phase separate and self-assemble the block copolymer material within a trench.
A method of forming a nanostructured polymer material, comprising zone heating a block copolymer material in a vapor of an organic solvent to cause the polymer blocks to phase separate and self-assemble the block copolymer material within a trench.
A method of forming a nanostructured polymer material, comprising zone heating a first section and then subsequent sections of a block copolymer material within a trench in a vapor of an organic solvent such that the copolymer material phase separates and self-assembles in said first section and then in said subsequent sections.
A method of forming a nanostructured polymer material, comprising zone heating a first section of the block copolymer material within the trench in a vapor of an organic solvent to cause said first section to phase separate and self-assemble, and then subsequently heating remaining sections of the block copolymer material within the trench in said vapor of the organic solvent to cause said remaining sections to phase separate and self-assemble.
A method of forming a nanostructured polymer material, comprising thermally annealing a block copolymer material in contact with a non-preferentially wetting solid material to cause the polymer blocks to phase separate and self-assemble the block copolymer material within a trench.
A method of etching a substrate, comprising:
- thermally annealing a block copolymer material in a vapor of an organic solvent to cause the polymer blocks to phase separate and self-assemble the block copolymer material within a trench in a material layer overlying the substrate;
- selectively crosslinking a first block of the self-assembled block copolymer material;
- and
- selectively removing a second block of the block copolymer material to form openings extending through the copolymer material;
- and
- etching portions of the substrate through said openings.
A method of etching a substrate, comprising:
- thermally annealing a block copolymer material in contact with a non-preferentially wetting solid material to cause the polymer blocks to phase separate and self-assemble the block copolymer material within a trench in a material layer overlying the substrate;
- removing the non-preferentially wetting solid material to expose the self-assembled block copolymer material;
- selectively crosslinking a first block of the self-assembled block copolymer material;
- and
- selectively removing a second block of the block copolymer material to form openings extending through the copolymer material;
- and
- etching portions of the substrate through said openings.
Dependencies are inferred from the claim text.