Methods of Improving Long Range Order in Self-Assembly of Block Copolymer Films with Ionic Liquids
AssigneeMicron Technology, Inc.
InventorJennifer Kahl Regner
Life of this patent
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Abstract
Methods for fabricating arrays of nanoscaled alternating lamellae or cylinders in a polymer matrix having improved long range order utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.
Claims22
A method of forming a nanostructured polymer material, comprising:
- depositing a self-assembling cylindrical-phase block copolymer composition within a trench, the block copolymer composition comprising a blend of a block copolymer and an ionic liquid, the trench having a length, a floor that is neutral wetting to both blocks of the block copolymers, and opposing sidewalls and ends that are preferentially wetting to a first block of the block copolymer;
- and
- annealing the block copolymer composition such that said block copolymer self-assembles into cylindrical domains of the first block within a matrix of a second block of the block copolymer, the self-assembled block copolymer material having a thickness, and the cylindrical polymer domains oriented perpendicular to the trench floor and extending through the thickness of the block copolymer material in a single row along the length of the trench.
A method of forming a nanostructured polymer material, comprising annealing a cylindrical phase block copolymer material situated in a trench such that said block copolymer self-assembles into cylindrical domains of a first block within a matrix of a second block of the block copolymer, the self-assembled block copolymer material having a thickness, and the cylindrical polymer domains oriented perpendicular to the trench floor and extending through the thickness of the self-assembled block copolymer material in a single row along the length of the trench.
A method of etching a substrate, comprising:
- annealing a block copolymer material comprising an ionic liquid and situated in a trench in a material overlying a substrate, the trench having a length, opposing sidewalls and ends that are preferentially wetting to one block of the block copolymer, and a floor that is neutral wetting to both blocks of the block copolymer, wherein the block copolymer forms perpendicular-oriented domains extending along the length of the trench;
- selectively removing a first block of the block copolymer to form openings exposing the substrate;
- and
- etching the substrate through the openings.
A method of etching a substrate, comprising:
- annealing a lamellar-phase block copolymer material comprising an ionic liquid and situated in a trench in a material on the substrate, the trench having a length, a width, opposing sidewalls and ends that are preferentially wetting to block of the block copolymer, and a floor that is neutral wetting to both blocks of the block copolymer, wherein the block copolymer material forms perpendicular-oriented lamellae spanning the width and extending along the length of the trench;
- selectively removing the first block or a second block of the block copolymer to form openings exposing the substrate;
- and
- etching the substrate through the openings.
A method of etching a substrate, comprising:
- annealing a cylindrical-phase block copolymer material comprising an ionic liquid and situated in a trench in a material on the substrate, the trench having a length, a width, opposing sidewalls and ends that are preferentially wetting to a first block of the block copolymer, and a floor that is neutral wetting to both blocks of the block copolymer, wherein the block copolymer material forms a single row of perpendicular-oriented cylinders of the first block in a matrix of a second block, the annealed block copolymer material having a thickness, and the cylinders extending through said thickness of the annealed block copolymer material;
- removing the first block to form openings exposing the substrate;
- and
- etching the substrate through the openings.
A method of etching a substrate, comprising:
- depositing a block copolymer material comprising an ionic liquid within a trench in a material overlying the substrate, the trench having a length, opposing sidewalls and ends that are preferentially wetting to a first block of the block copolymer, and a floor that is neutral wetting to both blocks of the block copolymers;
- causing a microphase separation in the block copolymer material to form self-assembled polymer domains oriented perpendicular to the floor of the trench and aligned parallel to the sidewalls along the length of the trench;
- selectively crosslinking one of the polymer domains;
- removing non-crosslinked polymer domains to form openings exposing the substrate;
- and
- etching the substrate through said openings.
A polymeric material situated within a trench in a material overlying a substrate, the trench having sidewalls, ends, a floor and a length, the polymeric material comprising a self-assembled block copolymer material comprising a first block selectively coordinating an ionic liquid and a second block, the blocks being oriented perpendicular to the trench floor and extending along the length of the trench.
A polymeric material situated within a trench in a material overlying a substrate, the trench having sidewalls, ends, a floor, a width and a length, the polymeric material comprising a self-assembled block copolymer material comprising alternating lamellae of a first block selectively coordinating an ionic liquid and a second block, the lamellae oriented perpendicular to the trench floor and extending along the length of the trench.
A polymeric material situated within a trench in a material overlying a substrate, the trench having sidewalls, ends, a floor, a width and a length, the polymeric material comprising a self-assembled block copolymer material comprising cylindrical polymer domains of a first block selectively coordinating an ionic liquid in a matrix of a second block, the cylindrical polymer domains oriented perpendicular to the trench floor and in a single row extending along the length of the trench.
Dependencies are inferred from the claim text.