Substrate supporting table, substrate processing apparatus, and manufacture method for semiconductor device

A substrate processing apparatus, comprising:

• a processing chamber configured to process a substrate;
• a substrate supporting table disposed inside the processing chamber, and configured to support the substrate;
• a gas supplying component configured to supply a processing gas into the processing chamber;
• a plasma generating component configured to transform the processing gas, supplied to the processing chamber, into plasma;
• and
• an exhausting component configured to perform exhaust in the processing chamber,
• wherein, the substrate supporting table comprises:
• a supporting plate configured to support the substrate;
• a peripheral wall configured to encompass a flow path being configured to pass a coolant under the supporting plate, an upper end of the peripheral wall being enclosed by the supporting plate;
• a lower cover configured to enclose a bottom portion of the flow path and a lower end of the peripheral wall;
• a coolant supplying component configured to supply a coolant through an upstream input of the flow path;
• a discharging component configured to discharge the coolant through a downstream output of the flow path;
• and a partition disposed between a supplying hole of the coolant supplying component and a discharging hole of the discharging component, and configured to form a gap between the partition and the bottom portion of the flow path, and
• wherein the substrate processing apparatus comprises a control component configured to control the supply of the coolant by the coolant supplying component and control the discharge of the coolant by the discharging component, when the plasma is generated.