METHOD FOR FORMING Cu WIRING

A Cu wiring forming method which is followed by a post-process including a treatment at a temperature of about 500° C. or higher, the method comprising:

• forming an adhesion film made of a metal having a lattice spacing which differs from a lattice spacing of Cu by about 10% or less on a substrate having a trench and/or a hole on a surface thereof such that the adhesion film is deposited on at least a bottom and side surfaces of the trench and/or the hole;
• forming a Cu film on the adhesion film to fill the trench and/or the hole;
• performing an annealing process on the substrate on which the Cu film has been formed at a temperature of about 350° C. or higher;
• polishing the Cu film to leave only the part of the Cu film which corresponds to the trench and/or the hole;
• and
• forming a cap on the polished Cu film to form a Cu wiring.