N-Type Silicon Solar Cell With Contact/Protection Structures

A method for fabricating an electrical circuit formed on a silicon substrate having an upper surface, the method comprising:

• depositing spaced-apart contact structures on the upper surface of the silicon wafer;
• depositing a blanket dielectric passivation layer over the contact structures and remaining exposed portions of the upper surface;
• forming contact openings through the dielectric layer such that each contact opening exposes a portion of a corresponding contact structure;
• foaming metal gridlines on the upper surface of the dielectric layer such that each metal gridline is electrically connected to the substrate by way of at least one via structure, wherein said at least one via structure extends through an associated contact opening of said plurality of contact openings.

A method for fabricating solar cells formed on an n-type silicon substrate having a p+emitter layer disposed under an upper surface of the n-type silicon wafer, the method comprising:

• depositing spaced-apart protective structures on the surface of the n-type silicon wafer;
• depositing a blanket dielectric passivation layer over the protective structures and remaining exposed portions of the upper surface;
• laser ablating selected portions of said dielectric passivation layer to form contact openings through the dielectric passivation layer such that each contact opening exposes a portion of a corresponding contact structure;
• forming metal gridlines on the upper surface of the dielectric passivation layer such that each metal gridline is electrically connected to at least one corresponding contact structure by way of at least one via structure, wherein said at least one via structure extends through an associated contact opening of said plurality of contact openings.