Solar battery cell and method of manufacturing the same

A solar battery cell comprising:

• an n-type silicon single crystal substrate;
• a p-type diffusion layer formed on one surface of the silicon single crystal substrate;
• an entirely uniform n-type diffusion layer formed on another surface of the silicon single crystal substrate;
• one light-receiving surface grid electrode or more and one busbar electrode or more which are formed on part of the p-type diffusion layer;
• one light-receiving surface grid electrode or more and one busbar electrode or more which are formed on part of the n-type diffusion layer,
• wherein a plurality of high-concentration p-type diffusion regions and low-concentration p-type diffusion regions each located between the high-concentration p-type diffusion regions are formed in the p-type diffusion layer,
• wherein the light-receiving surface grid electrodes and the busbar electrodes are formed adjacently to the high-concentration p-type diffusion regions and the entirely uniform n-type diffusion layer,
• wherein surface power generation capacity is 18% or more in terms of conversion efficiency, and
• wherein conversion efficiency of the other surface on which the n-type diffusion layer is formed is equal to or higher than 93% of conversion efficiency of the one surface on which the p-type diffusion layer is formed.

A method of manufacturing a solar battery cell comprising the steps of:

• forming, on one surface of an n-type silicon single crystal substrate, a p-type diffusion layer including a plurality of high-concentration p-type diffusion regions and low-concentration p-type diffusion regions each located between the high-concentration p-type diffusion regions;
• forming, on another surface of the n-type silicon single crystal substrate, an n-type diffusion layer including a plurality of high-concentration n-type diffusion regions and low-concentration n-type diffusion regions each located between the high-concentration n-type diffusion regions;
• and
• forming light-receiving surface grid electrodes and busbar electrodes adjacent to the high-concentration p-type diffusion regions and the high-concentration n-type diffusion regions.