Back to results
US 2012/0222732 A1Published application
Stacked structure including vertically grown semiconductor, p-n junction device including the stacked structure, and method of manufacturing thereof
AssigneeSamsung Electronics Co., Ltd.
InventorJun-hee CHOI
Life of this patent
Estimating the term…
Abstract
A stacked structure may include semiconductors or semiconductor layers grown on an amorphous substrate. A light-emitting device and a solar cell may include the stacked structure including the semiconductors grown on the amorphous substrate. A method of manufacturing the stacked structure, and the light-emitting device and the solar cell including the stacked structure may involve growing a crystalline semiconductor layer on an amorphous substrate.
Claims30
A stacked structure comprising:
- an amorphous substrate;
- a metal layer disposed on the amorphous substrate;
- a buffer layer disposed on the metal layer;
- a mask layer disposed on the buffer layer and having a plurality of holes exposing areas of the buffer layer;
- and
- a plurality of semiconductor elements grown from the areas of the buffer layer exposed by the plurality of holes of the mask layer so as to extend through the plurality of holes of the mask layer.
3 more elements
A method of manufacturing a stacked structure, the method comprising:
- forming a metal layer on an amorphous substrate;
- forming a buffer layer on the metal layer;
- forming a mask layer on the buffer layer, and forming a plurality of holes in the mask layer by patterning the mask layer exposing areas of the buffer layer;
- and
- growing a plurality of semiconductor elements from the areas of the buffer layer exposed by the plurality of holes of the mask layer so as to extend through the plurality of holes of the mask layer.
2 more elements
A light-emitting device comprising:
- an amorphous substrate;
- a metal layer disposed on the amorphous substrate;
- a buffer layer disposed on the metal layer;
- a mask layer disposed on the buffer layer and having a plurality of holes exposing areas of the buffer layer;
- a plurality of first conductive type semiconductor elements grown from the areas of the buffer layer exposed by the plurality of holes of the mask layer so as to extend through the plurality of holes of the mask layer;
- an active layer disposed on the plurality of first conductive type semiconductor elements;
- a second conductive type semiconductor layer disposed on the active layer;
- and
- a transparent electrode layer formed on the second conductive type semiconductor layer.
6 more elements
A solar cell comprising:
- an amorphous substrate;
- a metal layer disposed on the amorphous substrate;
- a buffer layer disposed on the metal layer;
- a mask layer disposed on the buffer layer and having a plurality of holes exposing areas of the buffer layer;
- a plurality of first conductive type semiconductor elements grown from the areas of the buffer layer exposed by the plurality of holes of the mask layer so as to extend through the plurality of holes of the mask layer;
- a second conductive type semiconductor layer disposed on the plurality of first conductive type semiconductor elements;
- and
- a transparent electrode layer disposed on the second conductive type semiconductor layer.
5 more elements
Dependencies are inferred from the claim text.