Back to results
US 2012/0222731 A1Published application
Heterojunction Solar Cell Having Amorphous Silicon Layer
AssigneesNational Tsing Hua University, Jiangsu Aide Solar Energy Technology Co.,Ltd
InventorsFang-Chi Hsieh, Li-Karn Wang
Life of this patent
Estimating the term…
Abstract
The present disclosure coats an amorphous silicon (Si) layer on a doped Si substrate of a solar cell. Or, a silicon dioxide (SiO2) layer is grown on the doped Si substrate and beneath the amorphous Si layer. A heterojunction interface and a homojunction interface are formed in the solar cell in a one-time diffusion. Thus, a heterojunction solar cell can be easily fabricated and utilities compatible to those used in modern production can still be used for reducing cost.
Claims20
A heterojunction solar cell having amorphous silicon (Si) layer, at least comprising:
- a Si substrate, said Si substrate being electrically doped, said Si substrate having a Si-substrate surface area on a front surface of said Si substrate, said Si substrate having a back-surface field area on a back surface of said Si substrate, said front surface of said Si substrate having a homojunction interface, said Si substrate having an original doping concentration smaller than 1019 cm−3;
- an amorphous Si layer, said amorphous Si layer being coated on said Si-substrate surface area on said front surface of said Si substrate, said amorphous Si layer having an electronic energy band gap bigger than said Si substrate, said amorphous Si layer producing a heterojunction between said amorphous Si layer and said Si substrate, said heterojunction being obtained through electrical doping;
- a transparent dielectric layer, said transparent dielectric layer being coated on said amorphous Si layer on said front surface of said Si substrate;
- a front electrode, said front electrode having a grid line form, said front electrode being coated on said transparent dielectric layer;
- and
- a back electrode, said back electrode being coated on said back-surface field area on said back surface of said Si substrate,
- wherein a diffusion area includes said amorphous Si layer and said Si-substrate surface area;
- and
- wherein said heterojunction between said amorphous Si layer and said Si substrate and said homojunction interface on said front surface of said Si substrate are obtained through electrical doping in a one-time diffusion.
6 more elements
A heterojunction solar cell having amorphous Si layer, at least comprising:
- a Si substrate, said Si substrate being electrically doped, said Si substrate having a Si-substrate surface area on a front surface of said Si substrate, said Si substrate having a back-surface field area on a back surface of said Si substrate, said front surface of said Si substrate having a homojunction interface, said Si substrate having an original doping concentration smaller than 1019 cm−3;
- a silicon dioxide (SiO2) layer, said SiO2 layer being coated on said Si-substrate surface area on said front surface of said Si substrate;
- an amorphous Si layer, said amorphous Si layer being coated on said SiO2 layer on said front surface of said Si substrate, said amorphous Si layer having an electronic energy band gap bigger than said Si substrate, said amorphous Si layer producing a heterojunction between said amorphous Si layer and said Si substrate, said heterojunction being obtained through electrical doping;
- a transparent dielectric layer, said transparent dielectric layer being coated on said amorphous Si layer on said front surface of said Si substrate;
- a front electrode, said front electrode having a grid line form, said front electrode being coated on said transparent dielectric layer;
- and
- a back electrode, said back electrode being coated on said back-surface field area on said back surface of said Si substrate,
- wherein a diffusion area includes said amorphous Si layer, said Si-substrate surface area and said SiO2 layer;
- and
- wherein said heterojunction between said amorphous Si layer and said Si substrate and said homojunction interface on said front surface of said Si substrate are obtained through electrical doping in a one-time diffusion.
7 more elements
Dependencies are inferred from the claim text.