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US 2012/0222730 A1Published application
Tandem solar cell with improved absorption material
AssigneeInternational Business Machines Corporation
InventorsOki Gunawan, Jeehwan Kim, David B. Mitzi, Devendra K. Sadana, Teodor K. Todorov
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Abstract
A photosensitive device and method includes a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween. A bottom cell includes an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. The bottom intrinsic layer includes a Cu—Zn—Sn containing chalcogenide.
Claims25
A photosensitive device, comprising:
- a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween;
- and
- a bottom cell having an N-type layer, a P-type layer and a bottom intrinsic layer therebetween, the bottom intrinsic layer including a Cu—Zn—Sn containing chalcogenide.
A photosensitive device, comprising:
- a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween;
- and
- a bottom cell having an N-type layer, a P-type layer and a bottom intrinsic layer therebetween, the bottom intrinsic layer including a Cu—Zn—Sn containing chalcogenide compound with a kesterite structure of the formula:
- Cu2-xZn1+ySn(S1-zSez)4+q wherein 0≦x≦1;
- 0≦y≦1;
- 0≦z≦1;
- =1≦q≦1, wherein z is controlled to adjust a band gap of the bottom cell to be lower than a band gap of the top cell.
4 more elements
A method for fabrication of a tandem photovoltaic device, comprising:
- forming a bottom cell having an N-type layer, a P-type layer and a bottom intrinsic layer therebetween, wherein the bottom intrinsic layer includes a Cu—Zn—Sn containing chalcogenide;
- and
- forming a top cell over the bottom cell to form a tandem cell, the top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween.
Dependencies are inferred from the claim text.