Crystal manufacturing
AssigneeOkmetic Oyj
InventorsOlli ANTTILA, Ari Saarnikko, Jari Paloheimo
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Abstract
An implementation of a Czochralski-type crystal growth has been shown and embodied. More particularly, a furnace with suitable insulation and flow arrangement is shown to improve the cost-efficiency of production of crystals. That is achieved by the shown new hot-zone structure, gas flows and the growth process which can decrease the power consumption, increase the lifetime of hot-zone parts and improve the productivity, e.g., by giving means for opening the hot-zone and easily adapting the hot-zone to a new crystal diameter.
Claims4
A method for a Czochralski crystal growth, wherein said method comprises
- dividing an inlet flow in a hot zone of a furnace so that a first partial flow is guided through a melt region of the hot zone, which comprises a region above or inside a crucible of the hot zone, and a second partial flow is prevented to interact with a shielding member of the hot zone and said first partial flow in said region above or inside the crucible of the hot zone for improving a quality of a crystal.
A crystal produced by a method, which comprises
- dividing an inlet flow in a hot zone of a furnace so that a first partial flow is guided through a melt region of the hot zone, which comprises a region above or inside a crucible of the hot zone, and a second partial flow is prevented to interact with a shielding member of the hot zone and said first partial flow in said region above or inside the crucible of the hot zone for improving a quality of a crystal.
Dependencies are inferred from the claim text.