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AssigneeNational Institute of Advance Industrial Science and Technology
InventorsTetsuo Tsuchiya, Masami Nishikawa, Tomohiko Nakajima, Toshiya Kumagai, Takaaki Manabe
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Provided is a resistor film comprising vanadium oxide as a main component, wherein metal-to-insulator transition is indicated in the vicinity of room temperature in temperature variations of electric resistance, there is no hysteresis in a resistance change in response to temperature variations or the temperature width is small at less than 1.5K even if there is hysteresis, and highly accurate measurement can be provided when used in a bolometer. Upon producing the resistor film comprising vanadium oxide as a main component by treating a coating film of an organovanadium compound via laser irradiation or the like, a crystalline phase and a noncrystalline (amorphous) phase are caused to coexist in the resistor film.
A resistor film comprising vanadium oxide as a main component, wherein a crystalline phase and a noncrystalline phase exist in the film.
A resistor film comprising vanadium oxide as a main components, wherein metal-to-insulator transition is indicated in the vicinity of room temperature in temperature variations of electric resistance, and there is no hysteresis in a resistance change in response to temperature variations or the temperature width is less than 1.5K even if there is hysteresis.
A resistor film comprising vanadium oxide as a main component, wherein there is no hysteresis in the resistance change in response to temperature variations or the temperature width is less than 1.5K even if there is hysteresis, and its temperature coefficient of resistance in a temperature range of 280K to 320K is 4%/K or higher.
Dependencies are inferred from the claim text.