# US 2012/0190114 A1 · Silicon-incorporated diamond-like carbon film, fabrication method thereof, and its use

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- Number: US 2012/0190114 A1
- Document ID: US20120190114A1
- Status: Published application
- Kind: A1
- Application number: 12/747,503
- Filed: 2009-10-08
- Published: 2012-07-26
- Earliest claimed: 2009-10-08
- Assignees: Korea Institute of Science and Technology
- Inventors: Myoung-Woon Moon; Kwang Ryeol Lee; Jin Woo Yin; Hae-Ri Kim
- Web page: https://patentgrep.com/patent/US20120190114A1

## CPC

- C23C 16/26: Deposition of carbon only
- A61L 27/303: {Carbon}
- A61L 31/084: {Carbon; Graphite}
- A61L 33/025: {Carbon; Graphite}
- C23C 16/30: Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- Y10T 428/13: Hollow or container type article [e.g., tube, vase, etc.]
- Y10T 428/24355: Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- A61L: METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES (preservation of bodies or disinfecting characterised by the agents employed A01N; preserving, e.g. sterilising, food or foodstuffs A23; preparations for medical, dental or toiletry purposes A61K)
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A silicon-incorporated diamond-like carbon thin film, a fabrication method thereof, and its use are disclosed. The silicon-incorporated diamond-like carbon thin film comprises a chemical bond between carbon and silicon atoms present on a surface of the silicon-incorporated diamond-like carbon thin film comprising silicon incorporated within and on the surface thereof with an atom providing hydrophilicity to the surface of the thin film on the surface of the thin film.

## Claims

### Claim 1

A silicon-incorporated diamond-like carbon thin film containing chemical bonds of carbon and silicon atoms present on a surface of said film, comprising silicon incorporated within and on the surface thereof with an atom (A) providing hydrophilicity to the surface of said film on the surface of said film.

### Claim 2 (depends on 1)

The film of claim 1, wherein silicon content in the said film ranges from 0.5 at. % to 17 at. %.

### Claim 3 (depends on 2)

The film of claim 2, wherein silicon content in said film ranges from 1.0 at. % to 2.5 at. %.

### Claim 4 (depends on 3)

The film of claim 3, wherein said film has a surface roughness of from 10 nm to 20 nm.

### Claim 5 (depends on 1)

The film of claim 1, wherein the atom (A) providing hydrophilicity to the surface of the thin film is an oxygen or a nitrogen atom.

### Claim 6 (depends on 1)

The film of claim 1, wherein the atom (A) is an oxygen atom, and Si—O bonds on the surface of the thin film range from 30% to 60%.

### Claim 7 (depends on 1)

The film of claim 1, wherein a contact angle of the surface of said film exceeds 0° but is not more than 50°.

### Claim 8 (depends on 7)

The film of claim 7, wherein a contact angle of the surface of said film exceeds 0° but is not more than 20°.

### Claim 9 (depends on 1)

A material for the medical use, comprising the film of claim 1.

### Claim 10 (depends on 9)

The material of claim 9, wherein the material is a blood stent, a heart valve, a heart pump, an artificial blood vessel, a pathological laboratory material for restraining coagulation of blood, or a blood storage container.

### Claim 11 (depends on 9)

A method to grow cells or organs which employs the material of claim 9.

### Claim 12 (depends on 1)

A method for fabricating the silicon-incorporated diamond-like carbon thin film of claim 1, comprising:
(a) forming a silicon-incorporated diamond-like thin film, wherein silicon atoms are incorporated within and on the surface of said film, on a surface of a substrate; and
(b) activating the surface of said film, followed by generating chemical bonds of carbon and silicon atoms present on the surface of the film with an atom (A) providing hydrophilicity to the surface of the film.

### Claim 13 (depends on 12)

The method of claim 12, wherein in step (a), the silicon-incorporated diamond-like thin film is formed by a method selected from the group consisting of plasma chemical vapor deposition, plasma synthesis, sputtering synthesis, self-filtering arc synthesis or ion beam deposition, or any combination thereof.

### Claim 14 (depends on 12)

The method of claim 12, wherein silicon content in the film formed in step (a) ranges from 0.5 at. % to 17 at. %.

### Claim 15 (depends on 14)

The method of claim 14, wherein silicon content in the film formed in step (a) ranges from 1.0 at. % to 2.5 at. %.

### Claim 16 (depends on 12)

The method of claim 12, wherein in step (b), the surface is activated by plasma or ion beam treatment.

### Claim 17 (depends on 16)

The method of claim 16, wherein the pressure inside a chamber in the plasma treatment ranges from 0.1 Pa to 10 Pa, and a bias voltage ranges from −100V to −800V.

### Claim 18 (depends on 16)

The method of claim 16, wherein the pressure in the ion beam treatment ranges from 1.0×10−7 Pa to 10 Pa, and the voltage ranges from 100V to 50 kV.

### Claim 19 (depends on 12)

The method of claim 12, wherein the surface of the silicon film obtained in step (b) has a roughness of from 10 nm to 20 nm.

### Claim 20 (depends on 12)

The method of claim 12, wherein the atom (A) providing hydrophilicity to the surface of the film is an oxygen or a nitrogen atom.

### Claim 21 (depends on 12)

The method of claim 12, wherein a contact angle of the surface of the film obtained in step (b) exceeds 0° but is not more than 50°.

### Claim 22 (depends on 21)

The method of claim 21, wherein a contact angle of the surface of the film obtained in step (b) exceeds 0° but is not more than 20°.

### Claim 23 (depends on 12)

The method of claim 12, wherein the substrate in (a) is a blood stent, a heart valve, a heart pump, an artificial blood vessel, a phathological laboratory material for restraining coagulation of blood, or a blood storage container.

### Claim 24 (depends on 12)

The method of claim 12, wherein the substrate in (a) is a glass, mirror or silicon substrate.

### Claim 25

A method for improving blood compatibility of a silicon-incorporated diamond-like carbon thin film, wherein silicon is present within and on the surface of the thin film, which method comprises treating a surface of said film with an oxygen or nitrogen plasma or ion beam, to generate Si—N or Si—O bonds on the surface of said film.

### Claim 26

A method for providing hydrophilicity to a silicon-incorporated diamond-like carbon thin film, wherein silicon is present within and on the surface of said film which method comprises treating said film with an oxygen or nitrogen plasma or ion beam, to generate Si—N or Si—O bonds on the surface of the film.

### Claim 27 (depends on 25)

The method of claim 25, wherein the silicon content in said film ranges from 0.5 at. % to 17 at. %.

### Claim 28

A method for semi-permanently maintaining hydrophilicity of a silicon-incorporated diamond-like carbon thin film, wherein silicon is present within and on the surface of said film which method comprises treating said film with oxygen plasma to generate Si—O bonds on the surface of the thin film.

### Claim 29 (depends on 28)

The method of claim 28, wherein the silicon content in said film ranges from 1.0 at. % to 2.5 at. %.

### Claim 30 (depends on 1)

A method for preventing surface of mirror, glass or silicon from being fogged which method comprises forming the film of claim 1 on the surface thereof.