US 2012/0181621 A1 · Field effect devices controlled via a nanotube switching element

Abstract

Field effect devices having a drain controlled via a nanotube switching element. Under one embodiment, a field effect device includes a source region and a drain region of a first semiconductor type and a channel region disposed therebetween of a second semiconductor type. The source region is connected to a corresponding terminal. A gate structure is disposed over the channel region and connected to a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the drain region and a terminal corresponding to the drain region. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the drain region and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.

Claims29

Dependent claims

A circuit array, comprising:

a plurality of bit lines, a plurality of word lines, a plurality of reference lines, and a plurality of release lines;
a plurality of cells, each cell of the plurality of cells being coupled to a corresponding bit line, word line, reference line, and release line, and each cell including:
a field effect device comprising a gate terminal, a source terminal, and a drain terminal, wherein the gate terminal of the field effect device is coupled to the word line coupled to the cell and the source terminal of the field effect device is coupled to the reference line coupled to the cell;
and
a nanotube switching element including a deflectable nanotube article positioned between a set electrode and a release electrode, wherein the release electrode is connected to the release line corresponding to the cell, and the set electrode is coupled to the drain terminal of the field effect device;
wherein each cell is selectable via activation of the corresponding bit and word lines coupled to the cell and wherein the nanotube switching element is switchable between at least two physical positions in response to electrical state at the corresponding bit, word, reference, and release lines for to the cell, the nanotube switching element non-volatilely storing an information state of the cell via the physical position.

3 more elements

A memory array capable of storing multiple memory states, the array having multiple nonvolatile transistor devices, each device comprising:

a source region and a drain region and a channel region disposed therebetween, the source region having a corresponding source terminal and the drain region having a corresponding drain terminal;
a gate structure disposed over the channel region and connected to a corresponding gate terminal;
a nanotube switching element, responsive to a control terminal, the nanotube switching element being electromechanically operable in response to electric state at each of the control, drain, source and gate terminals to form one of an open state and a closed state, wherein the nanotube switching element is in electrical communication with one of the drain region and the drain terminal and is in electrical communication with the other of the drain region and the drain terminal in one of the open and closed states;
wherein when the nanotube switching element is in the open state, an electrical communication path between the source terminal and the drain terminal is open, and wherein, when the nanotube switching element is in the closed state, the device is responsive to electrical state at the gate terminal to form a closed electrical communication path between the source terminal and the drain terminal.

1 more element

A four-terminal non-volatile nanotube routing device for connecting one of a first electrical network and a second electrical network to an electrical input terminal, the device comprising:

a first terminal in electrical communication with the first electrical network and a second terminal in communication with the second electrical network;
a source region, a drain region, a channel region disposed between the source region and the drain region, and a gate structure disposed over the channel region, the drain region being connected to the electrical input terminal and the gate structure being connected to a corresponding gate terminal;
a nanotube switching element in electrical communication with the source region, the nanotube switching element being electromechanically operable in response to electrical state at each of the first terminal, the second terminal, the electrical input terminal, and the gate terminal to form one of a first nonvolatile positional state and a second nonvolatile positional state;
wherein the device is responsive to electrical state at the gate terminal to induce the formation of an electrically conductive channel in the channel region so that when the nanotube switching element is in the first nonvolatile positional state, a closed electrical communication path is formed between the electrical input terminal and the first electrical network and so that when the nanotube switching element is in the second nonvolatile positional state, a closed electrical communication path is formed between the electrical input terminal and the second electrical network.

1 more element

Dependencies are inferred from the claim text.

Field effect devices controlled via a nanotube switching element

Life of this patent

Field effect devices controlled via a nanotube switching element

Life of this patent

Abstract

Claims29