System and method for low-power nanotube growth using direct resistive heating

An apparatus for growing, nanotubes from an element selected from among Carbon, Germanium, Boron, Boron-Nitride, Boron-Carbide, BiCjNk, Silicon and Silicon-Carbide, comprising:

• a chamber;
• a substrate in the chamber;
• one or more catalysts on the substrate;
• a plate over the catalysts;
• growth-inititiation system including,
• an energy source for indirectly heating the catalysts;
• and
• a first material source that supplies the heated catalysts with the selected element to initiate growth of an array of nanotubes from the catalysts, and a low-power growth system including,
• an electrical source connected between the substrate and plate to cause electrical current to flow through and resistively heat the one or more nanotubes;
• and
• a second material source that supplies the heated catalysts with the selected element to continue growth of the array of nanotubes.

A method for low-power growth of nanotubes from an element selected from among Carbon, Germanium, Boron, Boron-Nitride, Boron-Carbide, BiCiNk, Silicon and Silicon-Carbide, comprising:

• providing one or more growth-initiated nanotubes supported on a substrate, each nanotube including a catalyst:
• positioning a plate over the one or more nanotubes;
• connecting an electrical source between the substrate and plate to cause electrical current to flow through and resistively heat the nanotubes and the catalysts;
• and
• supplying the heated catalysts with the selected element to continue growth of array of nanotubes.