Integrated circuits with aligned (100) nmos and (110) pmos finfet sidewall channels

An integrated circuit device, comprising:

• a direct silicon bonded (DSB) hybrid orientation technology (HOT) substrate including an upper silicon layer having a top surface with one of a (100) or (110) crystal orientation directly bonded over a lower silicon substrate having a top surface with the other of the (100) or (110) crystal orientation;
• a recrystallized region of the upper silicon layer having the crystal orientation of the lower silicon substrate and patterned to form a first fin having a top surface with the other crystal orientation and a sidewall surface with the one crystal orientation;
• and
• an unamorphized region of the upper silicon layer patterned to form a second fin having a top surface with the one crystal orientation and a sidewall surface with the other crystal orientation;
• the first fin sidewall surface defining a channel with a current flow direction for one of a an NMOSFinFET or a PMOS FinFET, the second fin sidewall defining a channel with current flow direction for the other of the NMOS FinFET or the PMOSFinFET, and the second current flow direction being parallel to the first current flow direction.