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US 2012/0161273 A1Published application
Thermoelectric conversion material
AssigneeHitachi, Ltd.
InventorsTadashi Fujieda, Takashi Naito, Takuya Aoyagi
Life of this patent
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Abstract
A thermoelectric conversion material is provided, in which only a desired crystal is selectively precipitated. An MxV2O5 crystal is selectively precipitated in vanadium-based glass, wherein M is one metal element selected from the group consisting of iron, arsenic, antimony, bismuth, tungsten, molybdenum, manganese, nickel, copper, silver, an alkali metal and an alkaline earth metal, and 0<x<1.
Claims12
A thermoelectric conversion material comprising:
- semiconductor glass comprising vanadium,
- wherein at least a part of the semiconductor glass is crystallized.
A P-type thermoelectric conversion material comprising:
- semiconductor glass comprising vanadium,
- wherein at least a part of the semiconductor glass is crystallized, and
- wherein the semiconductor glass further comprises at least one selected from the group consisting of phosphorus, iron, arsenic, antimony, bismuth, tungsten, molybdenum, manganese and nickel.
An N-type thermoelectric conversion material comprising:
- semiconductor glass comprising vanadium,
- wherein at least a part of the semiconductor glass is crystallized, and
- wherein the semiconductor glass further comprises at least one selected from the group consisting of phosphorus, copper, silver, an alkali metal and an alkaline earth metal.
Dependencies are inferred from the claim text.