Image signal processing device and solid-state imaging device
AssigneeKabushiki Kaisha Toshiba
InventorsYuji MIYASHITA, Junichi HOSOKAWA, Masahiko NOZAKI
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Abstract
According to the embodiment, a feedback clamp circuit is included, which increases or decreases a clamp parameter so that a black level approaches a target value while controlling a change amount of the clamp parameter, which sets the black level, based on the black level read out from OB pixels.
Claims20
An image signal processing device comprising a feedback clamp circuit that increases or decreases a clamp parameter so that a black level approaches a target value while controlling a change amount of the clamp parameter, which sets the black level, based on the black level read out from OB pixels.
A solid-state imaging device comprising:
- a CMOS sensor that outputs an image signal;
- and
- an image signal processing unit that processes the image signal read out from the CMOS sensor, wherein
- the CMOS sensor includes
- an effective pixel unit in which effective pixels are arrayed,
- an OB pixel unit in which OB pixels are arrayed,
- a column ADC circuit that digitalizes a signal component read out from the effective pixels based on a comparison result with a reference voltage, and
- a reference voltage generating unit that generates the reference voltage, and
- the image signal processing unit includes
- a feedback clamp circuit that increases or decreases a clamp parameter that sets a black level so that the black level approaches a target value while controlling a change amount of the clamp parameter based on the black level read out from the OB pixels, and
- an OB clamp circuit that clamps an image signal read out from the effective pixels and calculates a clamp parameter correction coefficient that controls the change amount of the clamp parameter based on the black level read out from the OB pixels.
Dependencies are inferred from the claim text.