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US 2012/0146166 A1Published application
Magnetic random access memory cells having improved size and shape characteristics
AssigneeCrocus Technologies
InventorsAMITAY LEVI, DAFNA BEERY
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Abstract
A manufacturing method to form a memory device includes: (1) forming a dielectric layer adjacent to a magnetic stack; (2) forming an opening in the dielectric layer; (3) applying a hard mask material adjacent to the dielectric layer to form a pillar disposed in the opening of the dielectric layer; and (4) using the pillar as a hard mask, patterning the magnetic stack to form a MRAM cell.
Claims20
A manufacturing method to form a memory device, comprising:
- forming a dielectric layer adjacent to a magnetic stack;
- forming an opening in the dielectric layer;
- applying a hard mask material adjacent to the dielectric layer to form a pillar disposed in the opening of the dielectric layer;
- and
- using the pillar as a hard mask, patterning the magnetic stack to form a magnetic random access memory (MRAM) cell.
2 more elements
A memory device comprising:
- a MRAM cell;
- and
- a pillar disposed on the MRAM cell,
- wherein the pillar includes a hard metal, and a sidewall of the pillar is substantially aligned with a sidewall of the MRAM cell.
1 more element
Dependencies are inferred from the claim text.