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US 2012/0146020 A1Published application
Films and structures for metal oxide semiconductor light emitting devices and methods
AssigneeMoxtronics, Inc.
InventorsYungryel Ryu, Tae-seok Lee, Henry W. White
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Abstract
Semiconductor films and structures, such as films and structures utilizing zinc oxide or other metal oxides, and processes for forming such films and structures, are provided for use in metal oxide semiconductor light emitting devices and other metal oxide semiconductor devices, such as ZnO based semiconductor devices.
Claims1
A p-n junction based semiconductor light emitting device, comprising:
- a substrate,
- a ZnO based buffer layer formed on said substrate,
- a ZnO based first cladding layer formed on said ZnO based layer,
- a ZnO based layer formed between said buffer layer and said first cladding layer,
- a ZnO based first barrier layer formed on said first cladding layer,
- a ZnO based active layer formed on said first barrier layer,
- a ZnO based second barrier layer formed on said active layer,
- a ZnO based second cladding layer formed on said second barrier layer, and
- a ZnO based topmost electrical contact layer formed on said second cladding layer.
6 more elements
Dependencies are inferred from the claim text.