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US 2012/0144672 A1Published application
Valve and production method thereof
AssigneeCanon Kabushiki Kaisha
InventorAlexis Debray
Life of this patent
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Abstract
A method of producing a valve includes the steps of forming a channel in a silicon substrate, with the channel having an opening penetrating an entire thickness of the silicon substrate, and forming, by patterning, a metal layer on one surface of the silicon substrate without closing the opening of the channel. In addition, a low melting point metal member is deposited so as to cover at least a part of the metal layer and also to block the opening of the channel.
Claims9
-12. (canceled)
A method of producing a valve, comprising the steps of:
- forming a channel in a silicon substrate, the channel having an opening penetrating an entire thickness of the silicon substrate;
- forming, by patterning, a metal layer on one surface of the silicon substrate without closing the opening of the channel;
- and
- depositing a low melting point metal member so as to cover at least a part of the metal layer and also to block the opening of the channel.
1 more element
Dependencies are inferred from the claim text.