Tunnel junction via
AssigneeInternational Business Machines Corporation
InventorMichael C. Gaidis
Life of this patent
Estimating the term…
Abstract
A memory device comprising a plurality of tunnel junctions (TJs) includes a bottom wiring layer; a top wiring layer; a plurality of TJs contacting the bottom wiring layer and the top wiring layer; and a plurality of tunnel junction vias (TJVs) contacting the bottom wiring layer and the top wiring layer, wherein the plurality of TJVs each have a lower resistance the each of the plurality of TJs, wherein the plurality of TJVs comprise at least one concave surface, and wherein the at least one concave surface of the plurality of TJVs is configured to trap etched material during formation of the TJVs so as to reduce the resistance of the plurality of TJVs.
Claims12
A memory device comprising a plurality of tunnel junctions (TJs), the memory device comprising:
- a bottom wiring layer;
- a top wiring layer;
- a plurality of TJs contacting the bottom wiring layer and the top wiring layer;
- and
- a plurality of tunnel junction vias (TJVs) contacting the bottom wiring layer and the top wiring layer, wherein the plurality of TJVs each have a lower resistance the each of the plurality of TJs, wherein the plurality of TJVs comprise at least one concave surface, and wherein the at least one concave surface of the plurality of TJVs is configured to trap etched material during formation of the TJVs so as to reduce the resistance of the plurality of TJVs.
A memory device comprising a plurality of tunnel junctions (TJs), the memory device comprising:
- a bottom wiring layer;
- a top wiring layer;
- a plurality of TJs contacting the bottom wiring layer and the top wiring layer;
- and
- a plurality of tunnel junction vias (TJVs) contacting the bottom wiring layer and the top wiring layer, wherein the plurality of TJVs each comprise a short circuit between the bottom wiring layer and the top wiring layer, wherein the plurality of TJVs comprise at least one concave surface, and wherein the at least one concave surface of the plurality of TJVs is configured to trap etched material so as to cause short-circuit breakdown of the plurality of TJVs when subjected to a voltage configured to cause short-circuit breakdown of the plurality of TJVs.
A tunnel junction via (TJV) connecting a top wiring layer to a bottom wiring layer for the purpose of interlayer low-resistance connection in a memory device, comprising:
- a first layer of a conductive material;
- a tunnel barrier on top of the first layer of conductive material;
- and
- a second layer of the conductive material on top of the tunnel barrier, wherein the TJV comprises a short circuit between the bottom wiring layer and the top wiring layer, wherein the TJV comprises at least one concave surface, and wherein the at least one concave surface of the TJV is configured to trap etched material so as to cause short-circuit breakdown of the TJV when the TJV is subjected to a voltage configured to cause short-circuit breakdown of the TJV.
Dependencies are inferred from the claim text.