US 2012/0120336 A1Published application

Semiconductor device and method of fabricating the same

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsYoshiharu HIRAKATA, Yuugo GOTO, Yuko KOBAYASHI, Shunpei YAMAZAKI

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Abstract

There is provided a high quality liquid crystal panel having a thickness with high accuracy, which is designed, without using a particulate spacer, within a free range in accordance with characteristics of a used liquid crystal and a driving method, and is also provided a method of fabricating the same. The shape of a spacer for keeping a substrate interval constant is made such that it is a columnar shape, a radius R of curvature is 2 μm or less, a height H is 0.5 μm to 10 μm, a diameter is 20 μm or less, and an angle α is 65° to 115°. By doing so, it is possible to prevent the lowering of an opening rate and the lowering to of light leakage due to orientation disturbance.

Claims19

Dependent claims

A liquid crystal display device comprising:

a first substrate;
a second substrate;
an interlayer insulating film between the first substrate and the second substrate;
a storage capacitor between the interlayer insulating film and the first substrate;
a photolithographic spacer and a liquid crystal material which are between the interlayer insulating film and the second substrate;
a pixel electrode between the photolithographic spacer and the interlayer insulating film;
and
a counter electrode between the photolithographic spacer and the second substrate;
wherein the storage capacitor comprises an insulating film, an island-shaped semiconductor layer between the insulating film and the first substrate, and a capacitor wiring between the insulating film and the interlayer insulating film,
wherein the photolithographic spacer comprises a first resin material,
wherein the interlayer insulating film comprises a second resin material,
wherein the photolithographic spacer overlaps with the storage capacitor with the interlayer insulating film interposed between the photolithographic spacer and the storage capacitor, and
wherein the photolithographic spacer overlaps with the insulating film, the island-shaped semiconductor layer, and the capacitor wiring.

10 more elements

A liquid crystal display device comprising:

a first substrate;
a second substrate;
an interlayer insulating film between the first substrate and the second substrate;
a storage capacitor, a wiring and a pixel thin film transistor which are between the interlayer insulating film and the first substrate;
a photolithographic spacer, a liquid crystal material and a sealing material which are between the interlayer insulating film and the second substrate;
a pixel electrode between the photolithographic spacer and the interlayer insulating film;
and
a counter electrode between the photolithographic spacer and the second substrate;
wherein the storage capacitor comprises an insulating film, an island-shaped semiconductor layer between the insulating film and the first substrate, and a capacitor wiring between the insulating film and the interlayer insulating film,
wherein the storage capacitor comprises a first region of the island-shaped semiconductor layer,
wherein the pixel thin film transistor comprises a second region of the island-shaped semiconductor layer,
wherein the photolithographic spacer comprises a first resin material,
wherein the interlayer insulating film comprises a second resin material,
wherein the sealing material comprises a filler,
wherein the photolithographic spacer overlaps with the storage capacitor with the interlayer insulating film interposed between the photolithographic spacer and the storage capacitor,
wherein the sealing material overlaps with the wiring with the interlayer insulating film interposed between the sealing material and the wiring, and
wherein the photolithographic spacer overlaps with the insulating film, the island-shaped semiconductor layer, and the capacitor wiring.

14 more elements

A liquid crystal display device comprising:

an FPC;
a first substrate;
a second substrate;
a first insulating film between the first substrate and the second substrate;
a second insulating film between the first insulating film and the second substrate;
a storage capacitor and a pixel thin film transistor which are between the first insulating film and the first substrate;
a wiring and a first conductive layer which are between the first insulating film and the second insulating film;
a photolithographic spacer, a liquid crystal material and a sealing material which are between the second insulating film and the second substrate;
a pixel electrode between the photolithographic spacer and the second insulating film;
and
a counter electrode between the photolithographic spacer and the second substrate;
wherein the storage capacitor comprises an insulating film, an island-shaped semiconductor layer between the insulating film and the first substrate, and a capacitor wiring between the insulating film and the first insulating film,
wherein the storage capacitor comprises a first region of the island-shaped semiconductor layer,
wherein the pixel thin film transistor comprises a second region of the island-shaped semiconductor layer,
wherein the first conductive layer is electrically connected to the island-shaped semiconductor layer through a first contact hole provided in the first insulating film,
wherein the pixel electrode is electrically connected to the first conductive layer through a second contact hole provided in the second insulating film,
wherein the wiring is electrically connected to the FPC through a second conductive layer,
wherein the photolithographic spacer comprises a first resin material,
wherein the second insulating film comprises a second resin material,
wherein the sealing material comprises a filler,
wherein the photolithographic spacer overlaps with the storage capacitor with the second insulating film interposed between the photolithographic spacer and the storage capacitor,
wherein the sealing material overlaps with the wiring with the second insulating film interposed between the sealing material and the wiring,
wherein the second conductive layer overlaps with the wiring, and
wherein the photolithographic spacer overlaps with the insulating film, the island-shaped semiconductor layer, and the capacitor wiring.

21 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/359,515Filed 27 Jan 2012
Priority: JP 11-1911026 Jul 1999
Published: 17 May 2012
Term ends: Not estimatedThe source records don’t support an estimate.

Classification27 codes

G02F 1/13394
Gaskets; Spacers; Sealing of cells: spacers regularly patterned on the cell subtrate, e.g. walls, pillars
G02F 1/13306
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements: circuit arrangements or driving methods for the control of…
G02F 1/133345
Constructional arrangements; Manufacturing methods: insulating layers
G02F 1/13338
Constructional arrangements; Manufacturing methods: input devices, e.g. touch panels

Family

Application09/606,414Division · filed 29 Jun 2000
Application10/692,759Division · filed 27 Oct 2003
Application12/556,135Continuation · filed 9 Sep 2009
Application13/359,515Continuation
Application12/556,135Division
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From the US filing history. Foreign family members aren’t listed.