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US 2012/0119349 A1Published application
Insulation sheet made from silicon nitride, and semiconductor module structure using the same
AssigneesToshiba Materials Co., Ltd., Kabushiki Kaisha Toshiba
InventorTakayuki Naba
Life of this patent
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Abstract
An insulation sheet made from silicon nitride comprising: a sheet-shaped silicon-nitride substrate which contains β-silicon-nitride crystal grains as a main phase; and a surface layer which is formed on one face or both front and back faces of surfaces of the silicon-nitride substrate and is formed from a resin or a metal which includes at least one element selected from among In, Sn, Al, Ag, Au, Cu, Ni, Pb, Pd, Sr, Ce, Fe, Nb, Ta, V and Ti. A semiconductor module structure using the insulation sheet made from silicon nitride.
Claims14
An insulation sheet, comprising:
- a sheet-shaped silicon-nitride substrate comprising β-silicon-nitride crystal grains as a main phase;
- and
- a surface layer formed on one face or both front and back faces of the silicon-nitride substrate from a resin or at least one metal element selected from the group consisting of In, Sn, Al, Ag, Au, Cu, Ni, Pb, Pd, Sr, Ce, Fe, Nb, Ta, V and Ti.
An insulation sheet, comprising:
- a sheet-shaped silicon-nitride substrate;
- and
- a surface layer formed on a surface of the silicon-nitride substrate and having a Vickers hardness of 200 or less.
Dependencies are inferred from the claim text.