Method for the determination of impurities in silicon
AssigneeWacker Chemie AG
InventorKurt BONAUER-KLEPP
Life of this patent
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Abstract
The invention relates to a method for the determination of impurities in silicon, in which a monocrystalline rod is produced by means of zone refining from a silicon to be tested; this monocrystalline rod is introduced, in at least one dilution step, into a casing made of mono- or polycrystalline silicon having defined carbon and dopant concentrations and a diluted monocrystalline rod of silicon is produced from the rod and casing by means of zone refining; wherein the determination of impurities in the silicon to be tested is carried out with the aid of a diluted monocrystalline rod by means of photoluminescence or FTIR or both.
Claims6
A method for determining impurities in silicon, comprising:
- zone refining the silicon to produce a monocrystalline rod;
- conducting at least one dilution step to introduce the monocrystalline rod into a casing comprising mono- or polycrystalline silicon having defined carbon and dopant concentrations;
- zone refining the monocrystalline rod and the casing to produce a diluted monocrystalline rod of silicon;
- and
- conducting at least one of photoluminescence and FTIR on the diluted monocrystalline rod of silicon to determine impurities in the silicon.
Dependencies are inferred from the claim text.