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US 2012/0090536 A1Published application
Method for producing silicon epitaxial wafer
AssigneeSumco Corporation
InventorsMasayuki Ishibashi, Tomonori Miura
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Abstract
The method for producing a silicon epitaxial wafer according to the present invention has: a growth step G at which an epitaxial layer is grown on a silicon single crystal substrate; a first polishing step E at which, before the growth step G, both main surfaces of the silicon single crystal substrate are subjected to rough polishing simultaneously; and a second polishing step H at which, after the growth step G, the both main surfaces of the silicon single crystal substrate are subjected to finish polishing simultaneously.
Claims10
A method for producing a silicon epitaxial wafer, comprising:
- a growth step at which an epitaxial layer is grown on a silicon single crystal substrate;
- a first polishing step at which, before the growth step, both main surfaces of the silicon single crystal substrate are subjected to rough polishing simultaneously;
- and
- a second polishing step at which, after the growth step, the both main surfaces of the silicon single crystal substrate are subjected to finish polishing simultaneously.
1 more element
Dependencies are inferred from the claim text.