# US 2012/0074556 A1 · Semiconductor power module and method of manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2012/0074556 A1 - Document ID: US20120074556A1 - Status: Published application - Kind: A1 - Application number: 13/247,105 - Filed: 2011-09-28 - Published: 2012-03-29 - Earliest claimed: 2010-09-29 - Assignees: Rohm Co., Ltd. - Inventors: Toshio HANADA - Web page: https://patentgrep.com/patent/US20120074556A1 ## CPC - H10W 70/66: Conductive materials thereof - H10W 72/30: Die-attach connectors - H10W 76/13: Containers comprising a conductive base serving as an interconnection - H10W 90/00: Package configurations - H10W 72/073: {of die-attach connectors} - H10W 72/07351: {characterised by changes in properties of the die-attach connectors during connecting} - H10W 72/5445: {being orthogonal to a side surface of the chip, e.g. parallel arrangements} - H10W 72/5524: {comprising aluminium [Al]} - H10W 90/755: {between a chip and a laterally-adjacent insulating package substrate, interpose or RDL} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor power module according to the present invention includes a base member, a semiconductor power device having a surface and a rear surface with the rear surface bonded to the base member, a metal block, having a surface and a rear surface with the rear surface bonded to the surface of the semiconductor power device, uprighted from the surface of the semiconductor power device in a direction separating from the base member and employed as a wiring member for the semiconductor power device, and an external terminal bonded to the surface of the metal block for supplying power to the semiconductor power device through the metal block. ## Claims ### Claim 1 A semiconductor power module comprising: a base member; a semiconductor power device having a surface and a rear surface with the rear surface bonded to the base member; a metal block, having a surface and a rear surface with the rear surface bonded to the surface of the semiconductor power device, uprighted from the surface of the semiconductor power device in a direction separating from the base member and employed as a wiring member for the semiconductor power device; and an external terminal bonded to the surface of the metal block for supplying power to the semiconductor power device through the metal block. ### Claim 2 (depends on 1) The semiconductor power module according to claim 1, further comprising: a case having a base portion provided with a device region where the semiconductor power device is arranged and a frame portion fixed to the base portion for surrounding the device region; and a top plate, made of resin, fixed to the frame portion of the case and opposed to the device region, wherein the external terminal includes a plate terminal provided along the top plate, and the top plate has a support portion overlapping with the plate terminal in plan view for supporting the plate terminal from the side of a rear surface thereof. ### Claim 3 (depends on 2) The semiconductor power module according to claim 2, wherein an opening smaller than the plane area of the plate terminal is formed in a region of the top plate opposed to the plate terminal, the metal block is bonded to the plate terminal through the opening, and the support portion of the top plate includes a peripheral edge portion of the opening surrounding the metal block in the top plate. ### Claim 4 (depends on 2) The semiconductor power module according to claim 2, wherein the top plate is a member provided to be separable from the frame portion. ### Claim 5 (depends on 2) The semiconductor power module according to claim 2, wherein the top plate is formed in a U shape in plan view having an open end on a position on one side with respect to the plate terminal and having a blocked end on a position on a side opposite to the open end with respect to the plate terminal, and supported by the frame portion to be slidable in a sliding direction along a direction where the blocked end separates from the plate terminal, the metal block is bonded to the plate terminal in a region surrounded by the top plate between the open end and the blocked end, and the support portion of the top plate includes an edge portion of the region in the top plate. ### Claim 6 (depends on 5) The semiconductor power module according to claim 5, wherein the plate terminal is in the form of a quadrangle in plan view having a pair of first opposite sides extending along the sliding direction and a pair of second opposite sides orthogonal to the first opposite sides, the top plate has a pair of arm portions along the first opposite sides and a coupling portion coupling sides of the pair of arm portions in the sliding direction with each other, and is provided to surround three sides in the periphery of the plate terminal with the arm portions and the coupling portion, the pair of arm portions have first portions coming into contact with the peripheral edge portion of the plate terminal from outside in a transverse direction orthogonal to the sliding direction and second portions projecting from lower ends of the first portions along the rear surface of the plate terminal respectively, and the peripheral edge portion of the plate terminal along the first opposite sides fits into a recess portion partitioned by the first portions of the arm portions and the second portions of the arm portions. ### Claim 7 (depends on 6) The semiconductor power module according to claim 6, wherein the coupling portion has a first portion coming into contact with the peripheral edge portion of the plate terminal from outside in the sliding direction and a second portion projecting from a lower end of the first portion along the rear surface of the plate terminal, and the peripheral edge portion of the plate terminal along the second opposite sides fits into a recess portion partitioned by the first portion of the coupling portion and the second portion of the coupling portion. ### Claim 8 (depends on 2) The semiconductor power module according to claim 2, wherein both of the base portion and the frame portion are made of a metal, the base portion serves also as the base member supporting the semiconductor power device, and the frame portion serves also as a second external terminal for supplying power to the semiconductor power device through the base portion. ### Claim 9 (depends on 1) The semiconductor power module according to claim 1, wherein the semiconductor power device is a device employing an SiC semiconductor. ### Claim 10 (depends on 9) The semiconductor power module according to claim 9, wherein the metal block is made of Cu or an alloy material containing Cu. ### Claim 11 (depends on 1) The semiconductor power module according to claim 1, wherein the metal block is in the form of a rectangular parallelepiped. ### Claim 12 (depends on 1) The semiconductor power module according to claim 1, wherein the metal block has a tapered shape whose sectional area spreads from the rear surface toward the surface thereof. ### Claim 13 (depends on 1) The semiconductor power module according to claim 1, provided with a plurality of semiconductor power devices, wherein the external terminal is collectively bonded to the metal block bonded to each of the semiconductor power devices. ### Claim 14 (depends on 1) The semiconductor power module according to claim 1, wherein the top plate is provided with a through-hole passing through the top plate in the thickness direction in a region other than a region overlapping with the plate terminal in plan view. ### Claim 15 A method of manufacturing a semiconductor power module comprising the steps of: bonding a rear surface of a semiconductor power device having a surface and the rear surface to a base member; bonding a rear surface of a metal block, having a surface and the rear surface, employed as a wiring member for the semiconductor power device to the surface of the semiconductor power device after bonding the base member and the semiconductor power device to each other; performing preliminary soldering on an external terminal for supplying power to the semiconductor power device; and bonding the external terminal and the metal block to each other by bringing the metal block into contact with a portion of the external terminal subjected to the preliminary soldering and heating the external terminal. ### Claim 16 (depends on 15) The method of manufacturing a semiconductor power module according to claim 15, wherein the external terminal is a plate terminal in the form of a flat plate, and the step of performing the preliminary soldering includes a step of piling not less than a prescribed volume of solder on the plate terminal.