# US 2012/0074524 A1 · Lateral growth method for defect reduction of semipolar nitride films

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- Number: US 2012/0074524 A1
- Document ID: US20120074524A1
- Status: Published application
- Kind: A1
- Application number: 13/309,365
- Filed: 2011-12-01
- Published: 2012-03-29
- Earliest claimed: 2005-07-13
- Assignees: The Regents of the University of California
- Inventors: Troy J. Baker; Benjamin A. Haskell; James S. Speck; Shuji Nakamura
- Web page: https://patentgrep.com/patent/US20120074524A1

## CPC

- H10P 14/3466: {Crystal orientation}
- C30B 25/02: Epitaxial-layer growth
- C30B 29/40: AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi}
- H10P 14/271: {characterised by the preparation of substrate for selective deposition}
- H10P 14/276: {Lateral overgrowth}
- H10P 14/278: {Pendeoepitaxy}
- H10P 14/2901: {Materials}
- H10P 14/2904: {Silicon carbide}
- H10P 14/2921: {being crystalline insulating materials}
- H10P 14/3216: {Nitrides}
- H10P 14/3416: {Nitrides}
- H10P 14/3256: {Microstructure}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR

## Abstract

A lateral growth method for defect reduction of semipolar nitride films. The process steps include selecting a semipolar nitride plane and composition, selecting a suitable substrate for growth of the semipolar nitride plane and composition, and applying a selective growth process in which the semipolar nitride nucleates on some areas of the substrate at the exclusion of other areas of the substrate, wherein the selective growth process includes lateral growth of nitride material by a lateral epitaxial overgrowth (LEO), sidewall lateral epitaxial overgrowth (SLEO), cantilever epitaxy or nanomasking.

## Claims

### Claim 1

A method for growing a semiconductor film, comprising:
preparing a patterned template or substrate; and
growing a semi-polar III-nitride film laterally from one or more sidewalls of the patterned template or substrate.

### Claim 2 (depends on 1)

The method of claim 1, further comprising growing the semi-polar III-nitride film in a window region of the patterned template or substrate.

### Claim 3 (depends on 2)

The method of claim 2, further comprising growing the semi-polar III-nitride film laterally in a wing region from the window region.

### Claim 4 (depends on 3)

The method of claim 3, wherein a defect density of the semi-polar III-nitride film is reduced in the wing region as compared to the window region.

### Claim 5 (depends on 1)

The method of claim 1, wherein a threading dislocation density of the semi-polar III-nitride film is less than 2×109 cm−2.

### Claim 6 (depends on 1)

The method of claim 1, wherein a basal plane stacking faults density of the semi-poplar III-nitride film is less than 2×105 cm−1.

### Claim 7 (depends on 1)

The method of claim 1, wherein a surface of the semi-polar III-nitride film is a semi-polar plane and the semi-polar plane is a {10-11}, {10-12}, {10-13}, 10-14}, {20-21} or {11-22} plane.

### Claim 8 (depends on 7)

The method of claim 7, wherein defects are inclined with respect to the semi-polar plane.

### Claim 9 (depends on 1)

A semiconductor film grown using the method of claim 1.

### Claim 10

A semiconductor film, comprising:
a semi-polar III-nitride film laterally grown from one or more sidewalls of a patterned template or substrate.