# US 2012/0074442 A1 · Light emitting diode module

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- Number: US 2012/0074442 A1
- Document ID: US20120074442A1
- Status: Published application
- Kind: A1
- Application number: 13/309,364
- Filed: 2011-12-01
- Published: 2012-03-29
- Earliest claimed: 2006-02-02
- Assignees: Samsung Electro-Mechannics Co., Ltd.
- Inventors: Yu-sik KIM; Hyung-kun KIM; Cheol-soo SONE; Jae-wook JEONG
- Web page: https://patentgrep.com/patent/US20120074442A1

## CPC

- H10H 20/851: Wavelength conversion means
- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A light emitting diode module having improved luminous efficiency is provided. The light emitting diode module includes: a light emitting chip; a phosphor layer formed of phosphor materials emitting light having a wavelength longer than the light emitted from the light emitting chip using light emitted from the light emitting chip as an excitation source; and a reflection plate that is disposed between the light emitting chip and the phosphor layer and that reflects the light emitted by the phosphor layer.

## Claims

### Claim 1

A light emitting diode module comprising:
a light emitting chip;
a phosphor layer formed of phosphor materials emitting light having a longer wavelength than the light emitted from the light emitting chip using light emitted from the light emitting chip as an excitation source; and
a reflection plate that is disposed between the light emitting chip and the phosphor layer, and that reflects light emitted from the phosphor layer,
wherein a concavo-convex pattern is formed on the surface of the reflection plate which faces the light emitting chip.

### Claim 2

The light emitting diode module of 1, wherein the concavo-convex pattern is a hemispherical array or a polygonal cavity array.

### Claim 3 (depends on 1)

The light emitting diode module of claim 1, further comprising a resin layer that has a refractive index greater than the refractive index of the reflection plate and is formed between the reflection plate and the phosphor layer.

### Claim 4 (depends on 1)

The light emitting diode module of claim 1, wherein the reflection plate is formed of a material selected from the group consisting of SiO2, Al2O3, AlN, and ZnSe.