# US 2012/0074404 A1 · Supporting substrate, bonded substrate, method for manufacturing supporting substrate, and method for manufacturing bonded substrate

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- Number: US 2012/0074404 A1
- Document ID: US20120074404A1
- Status: Published application
- Kind: A1
- Application number: 13/262,153
- Filed: 2010-03-19
- Published: 2012-03-29
- Earliest claimed: 2009-03-31
- Assignees: Bridgestone Corporation
- Inventors: Kazuhiro Ushita
- Web page: https://patentgrep.com/patent/US20120074404A1

## CPC

- C30B 29/36: Carbides
- C30B 23/00: Single-crystal growth by condensing evaporated or sublimed materials
- C30B 25/00: Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B 33/06: Joining of crystals
- H10P 90/1904: {Preparing vertically inhomogeneous wafers}
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Provided is a supporting substrate (30) to be bonded on a single crystalline wafer composed of a single crystalline body. The supporting substrate is provided with a silicon carbide polycrystalline substrate (10) composed of a silicon carbide polycrystalline body, and a coat layer (20) deposited on the silicon carbide polycrystalline substrate (10). The coat layer (20) is composed of silicon carbide or silicon and is in contact with the single crystalline wafer, and the arithmetic average roughness of the contact surface (22) of the coat layer (20) in contact with the single crystalline wafer is 1 nm or less.

## Claims

### Claim 1

A supporting substrate to be bonded on a single crystalline wafer made of a single crystalline body, the supporting substrate comprising:
a silicon carbide polycrystalline substrate made of a silicon carbide polycrystalline body; and
a coating layer to be evaporated on the silicon carbide polycrystalline body, wherein
the coating layer is made of silicon carbide or silicon, and comes into contact with the single crystalline wafer, and
an arithmetic average roughness of a surface of the coating layer that comes into contact with the single crystalline wafer is 1 nanometer or less.

### Claim 2 (depends on 1)

The supporting substrate according to claim 1, wherein
the coating layer is evaporated on the silicon carbide polycrystalline substrate by means of a physical vapor deposition method or a chemical vapor deposition method.

### Claim 3 (depends on 1)

The supporting substrate according to claim 1, wherein a thickness of the coating layer is 5 microns or more.

### Claim 4

A bonded substrate comprising:
a single crystalline wafer made of a single crystalline body; and
a supporting substrate to be bonded on the single crystalline wafer,
wherein the supporting substrate has: a silicon carbide polycrystalline substrate made of a silicon carbide polycrystalline body; and a coating layer to be evaporated on the silicon carbide polycrystalline substrate,
the coating layer is made of silicon carbide or silicon, and comes into contact with the single crystalline wafer, and
an arithmetic average roughness of a surface of the coating layer that comes into contact with the single crystalline wafer is 1 nanometer or less.

### Claim 5

A method for manufacturing a supporting substrate to be bonded on a single crystalline wafer made of a single crystalline body, the method comprising the steps of:
evaporating silicon carbide or silicon on a silicon carbide polycrystalline substrate made of a silicon carbide polycrystalline body; and
applying grinding onto a face onto which the evaporation is made, in the silicon carbide polycrystalline substrate, so as to allow an arithmetic average roughness of the evaporated face to be 1 nanometer or less.

### Claim 6

A method for manufacturing a bonded substrate which has a single crystalline wafer made of a single crystalline body and a supporting substrate to be bonded on the single crystalline wafer, the method comprising the steps of:
evaporating silicon carbide or silicon on a silicon carbide polycrystalline substrate made of a silicon carbide polycrystalline body;
applying grinding onto a face onto which the evaporation is made, in the silicon carbide polycrystalline substrate, so as to allow an arithmetic average roughness of the evaporated face to be 1 nanometer or less; and
bonding a face to which the grinding is applied and the single crystalline wafer with each other.

### Claim 7 (depends on 2)

The supporting substrate according to claim 2, wherein a thickness of the coating layer is 5 microns or more.