# US 2012/0073610 A1 · Cleaning agent for semiconductor substrate, cleaning method using the cleaning agent, and method for producing semiconductor element

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- Number: US 2012/0073610 A1
- Document ID: US20120073610A1
- Status: Published application
- Kind: A1
- Application number: 13/245,096
- Filed: 2011-09-26
- Published: 2012-03-29
- Earliest claimed: 2010-09-27
- Assignees: FUJIFILM Corporation
- Inventors: Tetsuya KAMIMURA
- Web page: https://patentgrep.com/patent/US20120073610A1

## CPC

- H10P 50/287: {by chemical means}
- G03F 7/423: {containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds}
- H10P 70/273: {the processing being a delineation of conductive layers, e.g. by RIE}
- C11D 2111/22: Electronic devices, e.g. PCBs or semiconductors
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- C11D: DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL

## Abstract

A cleaning agent for a semiconductor substrate, which is capable of exerting cleaning power equivalent to that of an SPM cleaning agent, greatly improving damage of a semiconductor substrate by the SPM cleaning agent, and efficiently stripping and removing impurities adhered to the surface of the semiconductor substrate, particularly attached substances such as an ion-implanted resist, a cleaning method using the cleaning agent, and a method for producing a semiconductor element are provided. The cleaning agent for a semiconductor substrate comprises sulfuric acid, hydrogen peroxide and an alkylene carbonate. The method for cleaning a semiconductor substrate comprises cleaning the semiconductor substrate with sulfuric acid, hydrogen peroxide and an alkylene carbonate in combination.

## Claims

### Claim 1

A cleaning agent for a semiconductor substrate, comprising sulfuric acid, hydrogen peroxide and an alkylene carbonate.

### Claim 2 (depends on 1)

The cleaning agent for a semiconductor substrate according to claim 1, wherein the alkylene carbonate is ethylene carbonate or propylene carbonate.

### Claim 3 (depends on 1)

The cleaning agent for a semiconductor substrate according to claim 1, wherein the alkylene carbonate is used in an amount of from 10 to 95% by mass based on the total mass of the cleaning agent.

### Claim 4 (depends on 1)

The cleaning agent for a semiconductor substrate according to claim 1, wherein the cleaning agent is a multi-component kit comprising a combination of sulfuric acid, hydrogen peroxide and the alkylene carbonate.

### Claim 5 (depends on 1)

The cleaning agent for a semiconductor substrate according to claim 1, wherein the cleaning agent is a two-component kit comprising a mixture of hydrogen peroxide and the alkylene carbonate, and sulfuric acid.

### Claim 6 (depends on 1)

The cleaning agent for a semiconductor substrate according to claim 1, further comprising a sulfonate group-containing compound.

### Claim 7 (depends on 5)

The cleaning agent for a semiconductor substrate according to claim 5, wherein the mixture further comprises a sulfonate group-containing compound.

### Claim 8

A method for cleaning a semiconductor substrate, comprising cleaning the semiconductor substrate with sulfuric acid, hydrogen peroxide and an alkylene carbonate.

### Claim 9 (depends on 8)

The method for cleaning a semiconductor substrate according to claim 8, comprising a first step of cleaning the semiconductor substrate with a mixture of the alkylene carbonate and hydrogen peroxide, or with the alkylene carbonate, and a second step of cleaning the semiconductor substrate with a mixture of sulfuric acid, hydrogen peroxide and the alkylene carbonate.

### Claim 10 (depends on 9)

The method for cleaning a semiconductor substrate according to claim 9, wherein the mixture used in the second step further comprises a sulfonate group-containing compound.

### Claim 11

A method for producing a semiconductor element, wherein the semiconductor element is produced through a cleaning step of a semiconductor substrate comprising a first step of cleaning the semiconductor substrate with a mixture of an alkylene carbonate and hydrogen peroxide, or with the alkylene carbonate, and a second step of cleaning the semiconductor substrate with a mixture of sulfuric acid, hydrogen peroxide and the alkylene carbonate.