# US 2012/0073501 A1 · Process chamber for dielectric gapfill

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- Number: US 2012/0073501 A1
- Document ID: US20120073501A1
- Status: Published application
- Kind: A1
- Application number: 13/248,567
- Filed: 2011-09-29
- Published: 2012-03-29
- Earliest claimed: 2006-05-30
- Assignees: Applied Materials, Inc.
- Inventors: Dmitry Lubomirsky; Qiwei Liang; Soonam Park; Kien N. Chuc; Ellie Yieh
- Web page: https://patentgrep.com/patent/US20120073501A1

## CPC

- C23C 16/45502: {Flow conditions in reaction chamber}
- C23C 16/401: {containing silicon}
- C23C 16/402: {Silicon dioxide}
- C23C 16/452: by activating reactive gas streams before {their} introduction into the reaction chamber, e.g. by {ionisation} or addition of reactive species
- C23C 16/45514: {Mixing in close vicinity to the substrate}
- C23C 16/45565: {Shower nozzles}
- C23C 16/45574: {Nozzles for more than one gas}
- C23C 16/45576: {Coaxial inlets for each gas}
- C23C 16/45578: {Elongated nozzles, tubes with holes}
- C23C 16/4584: {the substrate being rotated}
- C23C 16/4586: {Elements in the interior of the support, e.g. electrodes, heating or cooling devices}
- C23C 16/505: using radio frequency discharges
- C23C 16/509: using internal electrodes
- C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)}
- H01J 37/32082: {Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence)}
- H01J 37/32357: {Generation remote from the workpiece, e.g. down-stream}
- H01J 37/3244: {Gas supply means}
- H01J 37/32724: {Temperature}
- H01J 37/32752: {for moving the material across the discharge}
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations}
- H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
- H01J 2237/2001: Maintaining constant desired temperature
- H01J 2237/3321: CVD [Chemical Vapor Deposition]
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.

## Claims

### Claim 1

A system to form a dielectric layer on a substrate, the system comprising:
a deposition chamber;
a substrate stage in the deposition chamber to hold the substrate;
a remote plasma generating system coupled to the deposition chamber, wherein the remote plasma generating system is used to generate a dielectric precursor comprising a reactive radical;
a precursor distribution system comprising a showerhead, wherein the showerhead comprises a faceplate having a first set of openings to permit passage of the reactive radicals to a deposition region of the reaction chamber, and a second set of openings to permit the passage of a second precursor to the deposition region; and
an in-situ plasma generating system to generate an in-situ plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.

### Claim 2 (depends on 1)

The system of claim 1, wherein the system comprises a first inlet port on the deposition chamber that fluidly couples the deposition chamber to the remote plasma generating system, wherein the reactive radicals pass though the first inlet port to reach the first set of openings in the showerhead.

### Claim 3 (depends on 1)

The system of claim 1, wherein the system comprises a second inlet port on the deposition chamber that fluidly couples the deposition chamber to a source for the second precursor, wherein the second precursor passes through the second inlet port to reach the second set of openings in the showerhead.

### Claim 4 (depends on 1)

The system of claim 1, wherein the showerhead comprises a first independent flow channel for the reactive radicals to reach the first set of openings and a second independent flow channel for the second precursor to reach the second set of openings, and wherein the reactive radicals and the second precursor do not make contact before exiting the first and second set of openings.

### Claim 5 (depends on 1)

The system of claim 1, wherein at least one of the second set of openings in the showerhead is annularly aligned around at least one of the first set of openings.

### Claim 6 (depends on 5)

The system of claim 5, wherein the second set of openings in the showerhead have an annular shaped gap about 0.003 inches, and the first set of openings have a circular radius of about 0.028 inches.

### Claim 7 (depends on 5)

The system of claim 5, wherein the reactive radicals exiting the first set of openings in the showerhead are surrounded by the second precursor exiting the second set of openings.

### Claim 8 (depends on 1)

The system of claim 1, wherein the in-situ plasma at least partially overlaps the deposition region of the deposition chamber.

### Claim 9 (depends on 8)

The system of claim 8, wherein the showerhead faceplate also acts as an electrode for the in-situ plasma generating system.

### Claim 10 (depends on 8)

The system of claim 8, wherein the substrate stage also acts as an electrode for the in-situ plasma generating system.

### Claim 11 (depends on 1)

The system of claim 1, wherein the precursor distribution system further comprises an oxygen-containing gas source coupled to the remote plasma generating system.

### Claim 12 (depends on 1)

The system of claim 1, wherein the precursor distribution system further comprises a silicon-precursor source to supply the second precursor.

### Claim 13

A system to form a dielectric layer on a substrate, the system comprising:
a deposition chamber;
a remote plasma generating system coupled to the deposition chamber, wherein the remote plasma generating system is used to generate a reactive radical dielectric precursor;
a precursor distribution system comprising a showerhead, wherein the showerhead comprises a faceplate having a first set of openings to permit the passage of the reactive radical precursor through a first set of openings to a deposition region of the reaction chamber, and a second set of openings to permit the passage of a second precursor to the deposition region; and
a first in-situ plasma region inside the deposition chamber, wherein the first in-situ plasma region is positioned on an opposite side of the showerhead faceplate from the deposition region, and wherein the second precursor is exposed to the first in-situ plasma region prior to exiting the showerhead for the deposition region.

### Claim 14 (depends on 13)

The system of claim 13, wherein the showerhead comprises a first independent flow channel for the reactive radical dielectric precursor to reach the first set of openings and a second independent flow channel for the second precursor to reach the second set of openings, and wherein the reactive radicals and the second precursor do not make contact before exiting the first and second set of openings.

### Claim 15 (depends on 14)

The system of claim 14, wherein at least one of the second set of openings in the showerhead is annularly aligned around at least one of the first set of openings.

### Claim 16 (depends on 14)

The system of claim 14, wherein the first precursor is not exposed to the first in-situ plasma region inside the deposition chamber.

### Claim 17 (depends on 14)

The system of claim 14, wherein the second independent flow channel is exposed to the first in-situ plasma region inside the deposition chamber.

### Claim 18 (depends on 13)

The system of claim 13, wherein the showerhead faceplate also acts as an electrode for the first in-situ plasma region.

### Claim 19 (depends on 13)

The system of claim 13, wherein the system further comprises a second in-situ plasma region inside the deposition chamber, wherein the second in-situ plasma region at least partially overlaps the deposition region of the deposition chamber.

### Claim 20 (depends on 19)

The system of claim 19, wherein the showerhead faceplate also acts as an electrode for the second in-situ plasma region.