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US 2012/0073494 A1Published application
Process and Apparatus for Large-Scale Manufacturing of Bulk Monocrystalline Gallium-Containing Nitride
AssigneeSoraa, Inc.
InventorMark P. D'EVELYN
Life of this patent
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Abstract
A method for large-scale manufacturing of gallium nitride includes a process for reducing and/or minimizing contamination in the crystals, for solvent addition to an autoclave, for improving or optimizing the solvent atmosphere composition, for removal of the solvent from the autoclave, and for recycling of the solvent. The method is scalable up to large volumes and is cost effective.
Claims19
1-20. (canceled)
A process for growing a crystalline gallium-containing nitride, the process comprising:
- providing a high pressure apparatus;
- providing a capsule comprising gallium-containing feedstock in one zone and at least one seed in another zone;
- while maintaining an elevated pressure within the capsule, introducing a solvent capable of forming a supercritical fluid into at least the one zone and the other zone;
- placing the capsule within the high pressure apparatus;
- processing one or more portions of the gallium-containing feedstock in the supercritical fluid to provide a supercritical solution comprising at least gallium containing species at a first temperature;
- and
- growing crystalline gallium-containing nitride material from the supercritical solution on the seed at a second temperature, the second temperature being characterized to cause the gallium containing species to form the crystalline gallium containing nitride material on the seed.
4 more elements
A process for growing a crystalline gallium-containing nitride, the process comprising:
- providing an autoclave or a capsule comprising gallium-containing feedstock in one zone and at least one seed in another zone;
- while maintaining an elevated pressure within the autoclave or capsule, introducing a first solvent capable of forming a supercritical fluid into at least the one zone and the other zone;
- processing one or more portions of the gallium-containing feedstock in the supercritical fluid to provide a supercritical solution comprising at least gallium containing species at a first temperature;
- growing crystalline gallium-containing nitride material from the supercritical solution on the seed at a second temperature, the second temperature being characterized to cause the gallium containing species to form the crystalline gallium containing nitride material on the seed;
- removing thermal energy from the autoclave or capsule to form a second solvent from the supercritical solution;
- and
- removing the second solvent from the autoclave or capsule through an outlet;
- and
- transferring the second solvent from the outlet to a purification process.
6 more elements
Dependencies are inferred from the claim text.