Method for manufacturing piezoelectric device

Abstract

An ion implantation layer is formed in a piezoelectric single crystal substrate by implanting hydrogen ions. A lower electrode is formed on the surface of the piezoelectric single crystal substrate at a side at which the ion implantation layer is formed. A sacrificial layer is formed on the surface of the piezoelectric single crystal substrate at a side at which the ion implantation layer and the lower electrode are formed. The formation of the sacrificial layer is performed by direct formation thereof on the surface of the piezoelectric single crystal substrate, for example, by sputtering or coating. A support layer is formed on the piezoelectric single crystal substrate on which the sacrificial layer is formed, and after the surface of the support layer is planarized, a support base material is bonded thereto.

Dependencies are inferred from the claim text.