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US 2012/0071006 A1Published application
Starting material for use in forming silicon oxide film and method for forming silicon oxide film using same
AssigneeTokyo Electron Limited
InventorSong Yun Kang
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Abstract
Disclosed is a starting material for use in forming a silicon oxide film on a substrate by the CVD method, comprising a siloxane compound having a carbonyl group, wherein the starting material is decomposed by applying energy, thereby releasing CO and producing a product having no dangling bond in the chemical structure, and the product contributes to the formation of the film. As a result, a silicon oxide film having a favorable step coverage is formed.
Claims11
A starting material for forming a silicon oxide film on a substrate by a chemical vapor deposition method, comprising:
- a siloxane-based compound having a carbonyl group,
- wherein the starting material is decomposed by applying energy to release CO and produce a product having no dangling bond in the chemical structure, and the product contributes to the formation of the film.
A method for forming a silicon oxide film, comprising:
- disposing a target substrate in a processing vessel;
- introducing a starting material for forming a silicon oxide film including a siloxane compound having a carbonyl group and an oxidizing agent into the processing vessel, the starting material is decomposed by applying energy to release CO and produce a product having no dangling bond in the chemical structure, and the product contributes to the formation of the film;
- attaching to a surface of the film the product having no dangling bond in the chemical structure produced by applying energy to the starting material for forming the silicon oxide film to release CO;
- and
- forming the silicon oxide film on the target substrate by a reaction of the product and the oxidizing agent.
2 more elements
Dependencies are inferred from the claim text.