Method of manufacturing semiconductor device and substrate processing apparatus
AssigneeHitachi Kokusai Electric Inc.
InventorMasanori NAKAYAMA
Life of this patent
Estimating the term…
Abstract
A process of manufacturing a semiconductor device may be simplified, and oxidation of a metal element-containing film may be suppressed. The method of manufacturing a semiconductor device includes loading a substrate including a metal element-containing film and an insulating film formed on the metal element-containing film into a process chamber and supporting the substrate using a substrate support installed in the process chamber; supplying a reactive gas including at least one of hydrogen in excited state and nitrogen in excited state, and oxygen in excited state onto the substrate in the process chamber and processing the substrate; and unloading the substrate from an inside of the process chamber.
Claims5
A method of manufacturing a semiconductor device, comprising:
- loading a substrate having thereon a metal element-containing film and an insulating film formed on the metal element-containing film into a process chamber and supporting the substrate using a substrate support installed in the process chamber;
- supplying a reactive gas including at least one of hydrogen in excited state and nitrogen in excited state, and oxygen in excited state onto the substrate in the process chamber and processing the substrate;
- and
- unloading the substrate from an inside of the process chamber.
Dependencies are inferred from the claim text.