Method of stripping hot melt etch resists from semiconductors
AssigneeRohm and Haas Electronics Materials LLC
InventorsHua DONG, Robert K. Barr
Life of this patent
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Abstract
Hot melt etch resist is selectively applied to an anti-reflective coating or a selective emitter on a semiconductor wafer. The exposed portions of the anti-reflective coating or selective emitter are etched away using an inorganic acid containing etch to expose the semiconductor surface. The hot melt etch resist is then stripped from the semiconductor with an alkaline stripper which does not compromise the electrical integrity of the semiconductor. The exposed semiconductor is then metalized to form current tracks.
Claims9
A method comprising:
- a) providing a semiconductor substrate comprising a PN junction, an anti-reflective coating on a front side and an electrode comprising aluminum on a back side of the semiconductor substrate having the PN junction;
- b) selectively applying a hot melt etch resist to the anti-reflective coating on the semiconductor substrate with the PN junction;
- c) applying an etchant to exposed portions of the anti-reflective coating of the semiconductor substrate with the PN junction to remove the exposed portions of the anti-reflective coating and selectively exposing the front side of the semiconductor substrate with the PN junction;
- and
- d) applying a stripper comprising potassium carbonate and potassium silicate to the semiconductor substrate with the PN junction to remove the hot melt etch resist from the anti-reflective coating.
A stripping composition consisting essentially of potassium carbonate, potassium silicate and water.
A method comprises:
- a) providing a semiconductor substrate comprising a PN junction, a selective emitter on a front side and an electrode comprising aluminum on a back side of the semiconductor substrate with the PN junction;
- b) selectively applying a hot melt etch resist to the selective emitter on the semiconductor substrate with the PN junction;
- c) applying an etchant to exposed portions of the selective emitter with the PN junction to etch the exposed portions;
- and
- d) applying a stripper which includes potassium carbonate and potassium silicate to the semiconductor substrate with the PN junction to remove the hot melt etch resist from the selective emitter.
Dependencies are inferred from the claim text.