Semiconductor device having insulating film with surface modification layer and method for manufacturing the same
AssigneeRenesas Electronics Corporation
InventorsMakoto UEKI, Takahiro ONODERA, Yoshihiro HAYASHI
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Abstract
Provided is a semiconductor device, which includes an interlayer insulating film formed on a semiconductor substrate, a wiring layer filled in a recess formed in the interlayer insulating film, and a cap insulating film. The interlayer insulating film includes a first SiOCH film and a surface modification layer including an SiOCH film formed by modifying a surface layer of the first SiOCH film, the SiOCH film having a lower carbon concentration and a higher oxygen concentration than the first SiOCH film has. The cap insulating film contacts with surfaces of the metal wiring and the surface modification layer.
Claims6
A manufacturing method for a semiconductor device comprising:
- forming a first insulating film including an SiOCH film on a semiconductor substrate;
- forming a surface modification layer as a surface layer of the first insulating film by performing plasma treatment using an inert gas;
- forming a hard mask on the surface modification layer;
- forming a recess in the hard mask and the first insulating film, the recess passing through the hard mask and the surface modification layer;
- forming a metal wiring to fill in the recess;
- exposing the surface modification layer by removing a part of the metal wiring exposed outside the recess and by removing the hard mask;
- and
- forming a second insulating film on surfaces of the exposed surface modification layer and the metal wiring.
Dependencies are inferred from the claim text.