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US 2012/0070985 A1Published application
Exposure method and method for manufacturing semiconductor device
OwnerTakaki Hashimoto, Kazuya Fukuhara +2inventors
InventorsTakaki Hashimoto, Kazuya Fukuhara, Toshiya Kotani, Yasunobu Kai
Life of this patent
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Abstract
According to one embodiment, an exposure method is disclosed. The method can include applying light to a photomask by an illumination. The method can include converging diffracted beams emitted from the photomask by a lens. In addition, the method can include imaging a plurality of point images on an exposure surface. On the photomask, a light transmitting region is formed at a lattice point represented by nonorthogonal unit cell vectors, and in the illumination, a light emitting region is set so that three or more of the diffracted beams pass through positions equidistant from center of a pupil of the lens.
Claims19
An exposure method comprising:
- applying light to a photomask by an illumination;
- converging diffracted beams emitted from the photomask by a lens;
- and
- imaging a plurality of point images on an exposure surface,
- on the photomask, a light transmitting region being formed at a lattice point represented by nonorthogonal unit cell vectors, and
- in the illumination, a light emitting region being set so that three or more of the diffracted beams pass through positions equidistant from center of a pupil of the lens.
3 more elements
An exposure method comprising:
- applying light to a photomask by an illumination;
- converging diffracted beams emitted from the photomask by a lens;
- and
- imaging a plurality of point images on an exposure surface,
- on the photomask, a light transmitting region being formed at a lattice point represented by nonorthogonal unit cell vectors, and
- in the illumination, a light emitting region being set so that two or more pairs of the diffracted beams are incident on a pupil of the lens and that the two diffracted beams belonging to each of the pairs pass through positions equidistant from center of the pupil of the lens.
3 more elements
An exposure method comprising:
- performing exposure of a plurality of point images on an exposure surface,
- on the exposure surface, the point images being located at part of lattice points of a lattice extending in first and second directions orthogonal to each other, and
- a light emitting region of an illumination being one or more regions selected from the group consisting of a region including a first point (σx11, σy11), a region including a second point (σx12, σy12), a region including a third point (σx13, σy13), a region including a fourth point (σx14, σy14), a region including a fifth point (σx15, σy15), and a region including a sixth point (σx16, σy16),
- where an arrangement pitch of the point images in the first direction is Px, an arrangement pitch of the lattice points in the second direction is Py, a distance in the first direction between one of the point images and another of the point images displaced by the Py in the second direction from the one point image is a×Px (a being a real number satisfying 0<a<1), a wavelength of light used for the exposure is λ, and a numerical aperture of a lens used for the exposure is NA.
- σ
- x
-
-
- 11
- =
- λ
- 2
-
- NA
-
- (
- 1
- P
- x
- -
- (
- 1
- -
- α
- )
-
- α
-
- P
- x
- P
- y
- 2
- )
- σ
- y
-
-
- 11
- =
- λ
- 2
-
- NAP
- y
- σ
- x
-
-
- 12
- =
- -
- λ
- 2
-
- NA
-
- (
- 1
- P
- x
- -
- (
- 1
- -
- α
- )
-
- α
-
- P
- x
- P
- y
- 2
- )
- σ
- y
- 12
- =
- -
- λ
- 2
-
- NAP
- y
- σ
- x
-
-
- 13
- =
- λ
- 2
-
- NA
-
- (
- 1
- P
- x
- -
- (
- 1
- -
- α
- )
-
- α
-
- P
- x
- P
- y
- 2
- )
- σ
- y
-
-
- 13
- =
- -
- λ
- 2
-
- NAP
- y
- σ
- x
-
-
- 14
- =
- -
- λ
- 2
-
- NA
-
- (
- 1
- P
- x
- -
- (
- 1
- -
- α
- )
-
- α
-
- P
- x
- P
- y
- 2
- )
- σ
- y
-
-
- 14
- =
- λ
- 2
-
- NAP
- y
- σ
- x
-
-
- 15
- =
- λ
- 2
-
- NA
-
- (
- 1
- P
- x
- +
- (
- 1
- +
- α
- -
- α
- 2
- )
-
- P
- x
- P
- y
- 2
- )
- σ
- y
-
-
- 15
- =
- (
- 2
-
- α
- -
- 1
- )
-
- λ
- 2
-
- NAP
- y
- σ
- x
-
-
- 16
- =
- -
- λ
- 2
-
- NA
-
- (
- 1
- P
- x
- +
- (
- 1
- +
- α
- -
- α
- 2
- )
-
- P
- x
- P
- y
- 2
- )
- σ
- y
-
-
- 16
- =
- -
- (
- 2
-
- α
- -
- 1
- )
-
- λ
- 2
-
- NAP
- y
269 more elements
An exposure method comprising:
- performing exposure of a plurality of point images on an exposure surface,
- on the exposure surface, the point images being located at part of lattice points of a lattice extending in first and second directions orthogonal to each other, and
- a light emitting region of an illumination being a region including at least one point in each of two or more pairs selected from the group consisting of a pair of a first point (σx21, σy21) and a second point (σx22, σy22), a pair of a third point (σx23, σy23) and a fourth point (σx24, σy24), and a pair of a fifth point (σx25, σy25) and a sixth point (σx26, σy26),
- where an arrangement pitch of the point images in the first direction is Px, an arrangement pitch of the lattice points in the second direction is Py, a distance in the first direction between one of the point images and another of the point images displaced by the Py in the second direction from the one point image is a×Px (a being a real number satisfying 0<a<1), a wavelength of light used for the exposure is λ, and a numerical aperture of a lens used for the exposure is NA.
- σ
- x
-
-
- 21
- =
- 0
- σ
- y
-
-
- 21
- =
- λ
- 2
-
- NAP
- y
- σ
- x
-
-
- 22
- =
- 0
- σ
- y
-
-
- 22
- =
- -
- λ
- 2
-
- NAP
- y
- σ
- x
-
-
- 23
- =
- λ
- 2
-
- NAP
- x
- σ
- y
-
-
- 23
- =
- -
- (
- 1
- -
- α
- )
-
- λ
- 2
-
- NAP
- y
- σ
- x
-
-
- 24
- =
- -
- λ
- 2
-
- NAP
- x
- σ
- y
-
-
- 24
- =
- (
- 1
- -
- α
- )
-
- λ
- 2
-
- NAP
- y
- σ
- x
-
-
- 25
- =
- λ
- 2
-
- NAP
- x
- σ
- y
-
-
- 25
- =
- αλ
- 2
-
- NAP
- y
- σ
- x
-
-
- 26
- =
- -
- λ
- 2
-
- NAP
- x
- σ
- y
-
-
- 26
- =
- -
- αλ
- 2
-
- NAP
- y
142 more elements
A method for manufacturing a semiconductor device, comprising:
- forming an interlayer insulating film on a substrate;
- forming a resist film on the interlayer insulating film;
- performing exposure on the resist film;
- developing the resist film;
- forming a contact hole in the interlayer insulating film by etching using the developed resist film as a mask;
- and
- forming a contact by burying a metal in the contact hole,
- the performing exposure including applying light to a photomask by an illumination, converging diffracted beams emitted from the photomask by a lens, and imaging a plurality of point images on an exposure surface,
- on the photomask, a light transmitting region being formed at a lattice point represented by nonorthogonal unit cell vectors,
- in the illumination, a light emitting region being set so that three or more of the diffracted beams pass through positions equidistant from center of a pupil of the lens, and
- each of the point images being a region where the contact hole is to be formed.
8 more elements
A method for manufacturing a semiconductor device, comprising:
- forming an interlayer insulating film on a substrate;
- forming a resist film on the interlayer insulating film;
- performing exposure on the resist film;
- developing the resist film;
- forming a contact hole in the interlayer insulating film by etching using the developed resist film as a mask;
- and
- forming a contact by burying a metal in the contact hole,
- the performing exposure including applying light to a photomask by an illumination, converging diffracted beams emitted from the photomask by a lens, and imaging a plurality of point images on an exposure surface,
- on the photomask, a light transmitting region being formed at a lattice point represented by nonorthogonal unit cell vectors,
- in the illumination, a light emitting region being set so that two or more pairs of the diffracted beams are incident on a pupil of the lens and that the two diffracted beams belonging to each of the pairs pass through positions equidistant from center of the pupil of the lens, and
- each of the point images being a region where the contact hole is to be formed.
8 more elements
A method for manufacturing a semiconductor device, comprising:
- forming an interlayer insulating film on a substrate;
- forming a resist film on the interlayer insulating film;
- performing exposure on the resist film;
- developing the resist film;
- forming a contact hole in the interlayer insulating film by etching using the developed resist film as a mask;
- and
- forming a contact by burying a metal in the contact hole,
- the performing exposure including applying light to a photomask by an illumination, converging diffracted beams emitted from the photomask by a lens, and imaging a plurality of point images on an exposure surface,
- on the photomask, a light transmitting region being formed at a lattice point represented by nonorthogonal unit cell vectors,
- in the illumination, a light emitting region being set so that three or more of the diffracted beams pass through positions equidistant from center of a pupil of the lens,
- on the exposure surface, the point images being located at part of the lattice points of a lattice extending in first and second directions orthogonal to each other,
- the unit cell vectors, denoted by a and b, being given by a=(Px, 0) and b=((1−a)×Px, Py), where Px is arrangement pitch of the point images in the first direction, Py is arrangement pitch of the lattice points in the second direction, and a is a real number greater than 0 and less than 1, and
- the point image being a region where the contact hole is to be formed.
10 more elements
A method for manufacturing a semiconductor device, comprising:
- forming an interlayer insulating film on a substrate;
- forming a resist film on the interlayer insulating film;
- performing exposure on the resist film;
- developing the resist film;
- forming a contact hole in the interlayer insulating film by etching using the developed resist film as a mask;
- and
- forming a contact by burying a metal in the contact hole,
- the performing exposure including applying light to a photomask by an illumination, converging diffracted beams emitted from the photomask by a lens, and imaging a plurality of point images on an exposure surface,
- on the photomask, a light transmitting region being formed at a lattice point represented by nonorthogonal unit cell vectors,
- in the illumination, a light emitting region being set so that two or more pairs of the diffracted beams are incident on a pupil of the lens and that the two diffracted beams belonging to each of the pairs pass through positions equidistant from center of the pupil of the lens,
- on the exposure surface, the point images being located at part of the lattice points of a lattice extending in first and second directions orthogonal to each other,
- the unit cell vectors, denoted by a and b, being given by a=(Px, 0) and b=((1−a)×Px, Py), where PX is an arrangement pitch of the point images in the first direction, Py is an arrangement pitch of the lattice points in the second direction, and a is a real number greater than 0 and less than 1, and
- each of the point images being a region where the contact hole is to be formed.
10 more elements
A method for manufacturing a semiconductor device, comprising:
- forming an interlayer insulating film on a substrate;
- forming a resist film on the interlayer insulating film;
- performing exposure on the resist film;
- developing the resist film;
- forming a contact hole in the interlayer insulating film by etching using the developed resist film as a mask;
- and
- forming a contact by burying a metal in the contact hole,
- the performing exposure including performing exposure of a plurality of point images on an exposure surface,
- on the exposure surface, the point images being located at part of lattice points of a lattice extending in first and second directions orthogonal to each other,
- a light emitting region of an illumination being one or more regions selected from the group consisting of a region including a first point (σx11, σy11), a region including a second point (σx12, σy12), a region including a third point (σx13, σy13), a region including a fourth point (σx14, σy14), a region including a fifth point (σx15, σyl5), and a region including a sixth point (σx16, σyl6),
- where an arrangement pitch of the point images in the first direction is Px, an arrangement pitch of the lattice points in the second direction is Py, a distance in the first direction between one of the point images and another of the point images displaced by the Py in the second direction from the one point image is a×Px (a being a real number satisfying 0<a<1), a wavelength of light used for the exposure is λ, and a numerical aperture of a lens used for the exposure is NA, and
- each of the point images being a region where the contact hole is to be formed.
- σ
- x
-
-
- 11
- =
- λ
- 2
-
- NA
-
- (
- 1
- P
- x
- -
- (
- 1
- -
- α
- )
-
- α
-
- P
- x
- P
- y
- 2
- )
- σ
- y
-
-
- 11
- =
- λ
- 2
-
- NAP
- y
- σ
- x
-
-
- 12
- =
- -
- λ
- 2
-
- NA
-
- (
- 1
- P
- x
- -
- (
- 1
- -
- α
- )
-
- α
-
- P
- x
- P
- y
- 2
- )
- σ
- y
- 12
- =
- -
- λ
- 2
-
- NAP
- y
- σ
- x
-
-
- 13
- =
- λ
- 2
-
- NA
-
- (
- 1
- P
- x
- -
- (
- 1
- -
- α
- )
-
- α
-
- P
- x
- P
- y
- 2
- )
- σ
- y
-
-
- 13
- =
- -
- λ
- 2
-
- NAP
- y
- σ
- x
-
-
- 14
- =
- -
- λ
- 2
-
- NA
-
- (
- 1
- P
- x
- -
- (
- 1
- -
- α
- )
-
- α
-
- P
- x
- P
- y
- 2
- )
- σ
- y
-
-
- 14
- =
- λ
- 2
-
- NAP
- y
- σ
- x
-
-
- 15
- =
- λ
- 2
-
- NA
-
- (
- 1
- P
- x
- +
- (
- 1
- +
- α
- -
- α
- 2
- )
-
- P
- x
- P
- y
- 2
- )
- σ
- y
-
-
- 15
- =
- (
- 2
-
- α
- -
- 1
- )
-
- λ
- 2
-
- NAP
- y
- σ
- x
-
-
- 16
- =
- -
- λ
- 2
-
- NA
-
- (
- 1
- P
- x
- +
- (
- 1
- +
- α
- -
- α
- 2
- )
-
- P
- x
- P
- y
- 2
- )
- σ
- y
-
-
- 16
- =
- -
- (
- 2
-
- α
- -
- 1
- )
-
- λ
- 2
-
- NAP
- y
277 more elements
A method for manufacturing a semiconductor device, comprising:
- forming an interlayer insulating film on a substrate;
- forming a resist film on the interlayer insulating film;
- performing exposure on the resist film;
- developing the resist film;
- forming a contact hole in the interlayer insulating film by etching using the developed resist film as a mask;
- and
- forming a contact by burying a metal in the contact hole,
- the performing exposure including performing exposure of a plurality of point images on an exposure surface,
- on the exposure surface, the point images being located at part of lattice points of a lattice extending in first and second directions orthogonal to each other,
- a light emitting region of an illumination being a region including at least one point in each of two or more pairs selected from the group consisting of a pair of a first point (σx21, σy21) and a second point (σx22, σy22), a pair of a third point (σx23, σy23) and a fourth point (σx24, σy24), and a pair of a fifth point (σx25, σy25) and a sixth point (σx26, σy26),
- where an arrangement pitch of the point images in the first direction is Px, an arrangement pitch of the lattice points in the second direction is Py, a distance in the first direction between one of the point images and another of the point images displaced by the Py in the second direction from the one point image is a×Px (a being a real number satisfying 0<a<1), a wavelength of light used for the exposure is λ, and a numerical aperture of a lens used for the exposure is NA, and
- each of the point image being a region where the contact hole is to be formed.
- σ
- x
-
-
- 21
- =
- 0
- σ
- y
-
-
- 21
- =
- λ
- 2
-
- NAP
- y
- σ
- x
-
-
- 22
- =
- 0
- σ
- y
-
-
- 22
- =
- -
- λ
- 2
-
- NAP
- y
- σ
- x
-
-
- 23
- =
- λ
- 2
-
- NAP
- x
- σ
- y
-
-
- 23
- =
- -
- (
- 1
- -
- α
- )
-
- λ
- 2
-
- NAP
- y
- σ
- x
-
-
- 24
- =
- -
- λ
- 2
-
- NAP
- x
- σ
- y
-
-
- 24
- =
- (
- 1
- -
- α
- )
-
- λ
- 2
-
- NAP
- y
- σ
- x
-
-
- 25
- =
- λ
- 2
-
- NAP
- x
- σ
- y
-
-
- 25
- =
- αλ
- 2
-
- NAP
- y
- σ
- x
-
-
- 26
- =
- -
- λ
- 2
-
- NAP
- x
- σ
- y
-
-
- 26
- =
- -
- αλ
- 2
-
- NAP
- y
150 more elements
Dependencies are inferred from the claim text.