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US 2012/0070983 A1Published application
Semiconductor device with gate trench
AssigneeNXP B.V.
InventorsPhilip Rutter, Christopher Martin Rogers
Life of this patent
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Abstract
A method of manufacturing a semiconductor device is presented. The device has: a gate terminal formed from polysilicon and covered by an insulation layer; and a plug extending through an insulation layer to provide an electrical connection to the gate trench. A metal layer is deposited to cover at least a portion of the insulation layer. The metal layer is then etched to remove the metal layer from above the plug.
Claims9
A method of manufacturing a semiconductor device having:
- a gate terminal formed from polysilicon and covered by an insulation layer;
- and a plug extending through an insulation layer to provide an electrical connection to the gate trench, the method comprising:
- depositing a metal layer which covers at least a portion of the insulation layer;
- and
- etching the metal layer to remove the metal layer from above the plug.
2 more elements
Dependencies are inferred from the claim text.