Methods for forming layers on a substrate
AssigneeApplied Materials, Inc.
InventorsJICK M. YU, RONG TAO, XINYU FU
Life of this patent
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Abstract
Methods for forming layers on a substrate having one or more features formed therein are provided herein. In some embodiments, a method for forming layers on a substrate having one or more features formed therein may include depositing a seed layer within the one or more features; and etching the seed layer to remove at least a portion of the seed layer proximate an opening of the feature such that the seed layer comprises a first thickness disposed on a lower portion of a sidewall of the feature proximate a bottom of the feature and a second thickness disposed on an upper portion of the sidewall proximate the opening of the feature and wherein the first thickness is greater than the second thickness.
Claims20
A method for forming layers on a substrate having one or more features, comprising:
- depositing a seed layer within the one or more features;
- and
- etching the seed layer to remove at least a portion of the seed layer proximate an opening of the feature such that the seed layer comprises a first thickness disposed on a lower portion of a sidewall of the feature proximate a bottom of the feature and a second thickness disposed on an upper portion of the sidewall proximate the opening of the feature and wherein the first thickness is greater than the second thickness.
The method of 15, wherein the barrier layer comprises one of titanium (Ti), tantalum (Ta), titanium nitride (TiN) or tantalum nitride (TaN).
A computer readable medium having instructions stored thereon that, when executed, cause a method for forming layers on a substrate having one or more features to be performed in a process chamber, the method comprising:
- depositing a seed layer within the one or more features;
- and
- etching the seed layer to remove at least a portion of the seed layer proximate an opening of the feature such that the seed layer comprises a first thickness disposed on a lower portion of a sidewall of the feature proximate a bottom of the feature and a second thickness disposed on an upper portion of the sidewall proximate the opening of the feature and wherein the first thickness is greater than the second thickness.
Dependencies are inferred from the claim text.