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US 2012/0070981 A1Published application
Atomic layer deposition of a copper-containing seed layer
OwnerScott B. Clendenning, James M. Blackwell +2inventors
InventorsScott B. Clendenning, James M. Blackwell, Patricio Romero, John Plombon
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Abstract
The present disclosure relates to the field of microelectronic device fabrication and, more particularly, to the formation of copper-containing seed layers for the fabrication of interconnects in integrated circuits. The copper-containing seed layers may be formed in an atomic layer deposition process with a copper pre-cursor and organometallic co-reagent.
Claims20
A method for fabricating an interconnection comprising:
- chemisorbing a copper pre-cursor on an opening formed in a dielectric material;
- exposing the copper pre-cursor to an organometallic co-reagent to form an unstable copper intermediate;
- and
- forming a copper-containing seed layer through the spontaneous reductive elimination of organic by-products from the unstable copper intermediate.
1 more element
A method for fabricating an interconnection comprising:
- forming a liner layer on an opening formed in a dielectric material;
- chemisorbing a copper pre-cursor on the liner layer;
- exposing the copper pre-cursor to an organometallic co-reagent to form an unstable copper intermediate;
- forming a copper alloy seed layer through the spontaneous reductive elimination of organic by-products from the unstable copper intermediate;
- and
- annealing the copper seed layer to migrate alloy metal within the copper alloy through the liner layer to form a barrier between the dielectric material and liner layer.
3 more elements
Dependencies are inferred from the claim text.