Method of electrolytic plating and semiconductor device fabrication
AssigneeInternational Business Machines Corporation
InventorsFelix P. Anderson, Zhong-Xiang He, Anthony K. Stamper, Eric J. White
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Abstract
The disclosure relates generally to semiconductor device fabrication, and more particularly to methods of electroplating used in semiconductor device fabrication. A method of electroplating includes: immersing an in-process substrate into an electrolytic plating solution to form a first metal layer on the in-process substrate; then performing a first chemical-mechanical polish to a liner on the in-process substrate followed by immersing the in-process substrate into the electrolytic plating solution to form a second metal layer on the first metal layer and the liner; and performing a second chemical-mechanical polish to the liner.
Claims25
A method of electrolytic plating comprising:
- immersing an in-process substrate into an electrolytic plating solution, the in-process substrate including:
- a layer defining a feature;
- a liner over the layer;
- and
- a seed layer over the liner;
- rotating the in-process substrate in the electrolytic plating solution to form a first metal layer over the seed layer;
- performing a first chemical-mechanical polish (CMP) to the first metal layer and the liner on the in-process substrate,
- wherein a portion of the first metal layer is retained within the feature;
- immersing the in-process substrate into the electrolytic plating solution after the performing of the first CMP;
- rotating the in-process substrate in the electrolytic plating solution after the performing of the first CMP and the immersing to form a second metal layer directly on the portion of the first metal layer retained within the feature;
- and
- performing a second chemical-mechanical polish to the liner.
A method of fabricating a semiconductor device comprising:
- conformally coating a trench within a dielectric layer disposed on a substrate with a liner and a metal seed layer over the liner;
- immersing the substrate into an electrolytic plating solution;
- rotating the substrate in the electrolytic plating solution to form a first metal layer over the metal seed layer;
- performing a first chemical-mechanical polish (CMP) to the first metal layer and the liner,
- wherein a portion of the first metal layer is retained within the trench;
- immersing the substrate into the electrolytic plating solution after the performing of the first CMP;
- rotating the substrate in the electrolytic plating solution after the performing of the first CMP and the immersing to form a second metal layer directly on the portion of the first metal layer retained within the trench;
- and
- performing a second chemical-mechanical polish to the liner.
A method of electrolytic plating comprising:
- immersing an in-process substrate into an electrolytic plating solution, the in-process substrate including:
- a liner;
- and
- a seed layer over the liner;
- rotating the in-process substrate in a first direction in the electrolytic plating solution to form a first metal layer over the seed layer;
- rotating the in-process substrate in a second direction opposite the first direction in the electrolytic plating solution after the rotating in the first direction to form a second metal layer directly over the first metal layer;
- and
- performing a chemical-mechanical polish to the liner on the in-process substrate after the forming of the second metal layer.
A method of fabricating a semiconductor device comprising:
- conformally coating a trench within a dielectric layer disposed on a substrate with a liner and a metal seed layer over the liner;
- immersing the substrate into an electrolytic plating solution;
- rotating the substrate in a first direction in the electrolytic plating solution to form a first metal layer over the metal seed layer;
- rotating the substrate in a second direction opposite the first direction in the electrolytic plating solution after the rotating in the first direction to form a second metal layer directly on the first metal layer;
- and
- performing a chemical-mechanical polish to the liner after the forming of the second metal layer.
Dependencies are inferred from the claim text.