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US 2012/0070977 A1Published application
Methods For Forming Contacts in Semiconductor Devices
AssigneeInfineon Technologies AG
InventorsRoberto Schiwon, Klaus Herold, Jenny Lian, Sajan Marokkey, Martin Ostermayr
Life of this patent
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Abstract
Mask sets, layout design, and methods for forming contacts in devices are described. In one embodiment, a semiconductor device includes a plurality of contacts disposed over a substrate, the plurality of contacts being disposed as rows and columns on an orthogonal grid, each row of the plurality of contacts is spaced from an neighboring row of the plurality of contacts by a first distance, and each column of the plurality of contacts is spaced from an neighboring column of the plurality of contacts by a second distance.
Claims26
A method of manufacturing a semiconductor device, the method comprising:
- forming an insulating layer over a substrate;
- coating a first photo resist layer over the insulating layer;
- using a first mask, patterning the first photo resist layer thereby forming first features oriented in a first direction, the first mask comprising a first plurality of lines oriented in the first direction;
- after patterning the first photo resist layer, coating a second photo resist layer;
- using a second mask, patterning the second photo resist layer thereby forming second features oriented in a second direction, wherein the second mask comprises a second plurality of lines oriented in the second direction orthogonal to the first direction, wherein the second mask is aligned relative to the first mask such that the first features are perpendicular to the second features;
- after patterning the second photo resist layer, coating a third photo resist layer;
- using a third mask, patterning the third photo resist layer thereby forming third features, wherein the first, the second, and the third features comprise a pattern for forming contact holes;
- and
- forming contact holes by etching the insulating layer using the first, the second, and the third features.
6 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming an insulating layer over a substrate;
- forming a first photo resist layer over the insulating layer;
- using a first mask, patterning the first photo resist layer thereby forming first features oriented in a first direction, the first mask comprising a first plurality of lines oriented in the first direction, wherein the first mask comprises a first notch such that a first line of the first plurality of lines is shorter than a second line of the first plurality of lines in a portion of the first mask;
- after patterning the first photo resist layer, patterning a second photo resist layer using a second mask thereby forming second features oriented in a second direction, wherein the second mask comprises a second plurality of lines oriented in the second direction orthogonal to the first direction, wherein the second mask is aligned relative to the first mask such that the first features are perpendicular to the second features;
- and
- after patterning the second photo resist layer, patterning a third photo resist layer using a third mask thereby forming third features;
- and
- forming contact holes by etching the insulating layer using the first, the second, and the third features, the contact holes comprising a first contact hole in a region exposed through the first notch and a second contact hole, wherein the first contact hole has a length in the second direction longer than a length of the second contact hole in the second direction.
5 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming an insulating layer over a substrate;
- coating a first photo resist layer over the insulating layer;
- using a first mask, patterning the first photo resist layer thereby forming first features oriented in a first direction, the first mask comprising a first region and a second region, the first region having a first plurality of lines oriented in the first direction, the first plurality of lines spaced by a first distance, the second region having a second plurality of lines oriented in the first direction, the second plurality of lines spaced by a second distance, wherein the first distance is different from the second distance;
- after patterning the first photo resist layer, coating a second photo resist layer;
- using a second mask, patterning the second photo resist layer thereby forming second features oriented in a second direction orthogonal to the first direction, wherein the second mask comprises a third region and a fourth region, wherein the third region has a third plurality of lines oriented in the second direction, wherein the third plurality of lines are spaced by a third distance, wherein the fourth region has a fourth plurality of lines oriented in the second direction, wherein the fourth plurality of lines are spaced by a fourth distance, wherein the second mask is aligned relative to the first mask such that the first features are perpendicular to the second features;
- after patterning the second photo resist layer, coating a third photo resist layer;
- and
- using a third mask, patterning the third photo resist layer thereby forming third features, wherein the first, the second, and the third features comprise a pattern for forming contact holes in the first region and the second region, wherein the pattern for contact holes is on a first orthogonal grid formed by the first plurality of lines and the third plurality of lines and a second orthogonal grid formed by the second plurality of lines and the fourth plurality of lines, wherein the pattern in the first region comprises a first pattern for a first contact hole and a second pattern for a second contact hole, wherein the first pattern is disposed along a first row, wherein the second pattern is disposed along a first column, wherein the first row and the first column intersect at a grid point on the first orthogonal grid, and wherein no third features are disposed at the grid point;
- and
- forming the contact holes in the first region and the second region by etching the insulating layer using the first, the second, and the third features.
7 more elements
Dependencies are inferred from the claim text.