Manufacture method for semiconductor device
AssigneeFujitsu Semiconductor Limited
InventorsHikaru Ohira, Tomoyuki Kirimura
Life of this patent
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Abstract
A semiconductor device manufacture method includes: forming a first film above a semiconductor substrate; forming a first mask film above the first film; patterning the first mask film; executing a plasma process for a side wall of the patterned first mask film to transform the side wall into a transformed layer; after the plasma process, forming a second mask film covering the first mask film; etching the second mask film to remove the second mask film above the first mask film and leave the second mask film formed on the side wall; after the etching the second mask film, removing the transformed layer; and after the removing the transformed layer, etching the first film by using the first mask film and the second mask film as mask.
Claims19
A semiconductor device manufacture method comprising:
- forming a first film above a semiconductor substrate;
- forming a first mask film above the first film;
- patterning the first mask film;
- executing a plasma process for a side wall of the patterned first mask film to transform the side wall into a transformed layer;
- after the plasma process, forming a second mask film covering the first mask film;
- etching the second mask film to remove the second mask film above the first mask film and leave the second mask film formed on the side wall;
- after the etching the second mask film, removing the transformed layer;
- and
- after the removing the transformed layer, etching the first film by using the first mask film and the second mask film as mask.
A semiconductor device manufacture method comprising:
- forming a first film above a semiconductor substrate;
- forming a first mask film above the first film;
- patterning the first mask film into a plurality of portions juxtaposed at an interval;
- executing a plasma process for side walls of the first mask film portions to transform the side walls into transformed layers;
- after the plasma process, forming a second mask film covering the first mask film portions;
- etching the second mask film to remove the second mask film above the first mask film portions and leave the second mask film at the interval between the first mask film portions;
- after the etching the second mask film, removing the transformed layers;
- and
- after the removing the transformed layers, etching the first film by using the first mask film and the second mask film as mask.
Dependencies are inferred from the claim text.