Back to results
US 2012/0070966 A1Published application
Method for manufacturing semiconductor element
AssigneeKabushiki Kaisha Toshiba
InventorsHiroshi Katsumata, Junji Kataoka, Toshiyuki Terada, Yoshiharu Kouji, Hidenori Hanyu, Norikazu Sugawara, Shinji Onduka
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a semiconductor element includes etching a surface of a substrate by a dry etching processing, performing a first heat treatment for the surface of the substrate in an atmosphere including halogen, and forming a nitride semiconductor on the surface of the substrate.
Claims20
A method for manufacturing a semiconductor element, comprising:
- etching a surface of a substrate by a dry etching processing;
- performing a first heat treatment for the surface of the substrate in an atmosphere including halogen;
- and
- forming a nitride semiconductor on the surface of the substrate.
1 more element
Dependencies are inferred from the claim text.