Microelectronic device wafers and methods of manufacturing
AssigneeMicron Technology, Inc.
InventorsAlan G. Wood, Ed A. Schrock, Ford B. Grigg
Life of this patent
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Abstract
Methods of forming microelectronic device wafers include fabricating a plurality of semiconductor dies at an active side of a semiconductor wafer, depositing a mask on the semiconductor wafer, removing a central portion of the mask and the semiconductor wafer, and etching. The semiconductor wafer has an outer perimeter edge and a backside that is spaced from the active side by a first thickness. The mask is deposited on the backside of the semiconductor wafer and has a face that is spaced from the backside by a mask thickness. The thinned portion has a thinned surface that is spaced from the active side by a second thickness that is less than the first thickness, and the thinned surface is etched.
Claims2
A method of manufacturing semiconductor devices, comprising:
- fabricating a plurality of semiconductor dies at an active side of on a semiconductor wafer, wherein the semiconductor wafer has a backside spaced from the active side by a first thickness;
- and
- forming a support portion and a thinned portion by removing material from the semiconductor wafer, wherein the support portion surrounds the thinned portion, and wherein the support portion has a first thickness and the thinned portion has a second thickness less than the first thickness.
Dependencies are inferred from the claim text.